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Optimization of alloy composition for high-performance strained-Si-SiGeN-channel MOSFETs

Optimization of alloy composition for high-performance strained-Si-SiGeN-channel MOSFETs
Optimization of alloy composition for high-performance strained-Si-SiGeN-channel MOSFETs
On-state and off-state performance of strained- Si–SiGe n-channel MOSFETs have been investigated as a function of SiGe virtual substrate alloy composition. Performance gains in terms of on-state drain current and maximum transconductance of up to 220% are demonstrated for strained-Si–SiGe devices compared with Si controls. Device performance is found to peak using a virtual substrate composition of Si0.75Ge0.25. MOSFET fabrication used high thermal budget processing and good gate oxide quality has been maintained for virtual substrates having Ge compositions up to 30%. Off-state characteristics are found to be more sensitive to strain relaxation than on-state characteristics.
Drain current enhancement, mobility enhancement, n-MOSFETs, silicon-germanium (SiGe), strained-Silicon, thermal budget, transconductance enhancement, virtual substrate
1156-1163
Olsen, Sarah H.
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O'Neill, A.G.
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Driscoll, L.S.
d780b102-86d0-40ae-b8e6-a0eaf8f6879c
Chattopadhyay, S.
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Kwa, K.s.K.
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Waite, A.
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Tang, Y.T.
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Evans, A.G.R.
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Zhang, Jing
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Olsen, Sarah H.
c6d5e012-c9f3-4f1b-af45-b624a863e152
O'Neill, A.G.
7b68e26b-6d63-4f28-a19c-0126dc2f9dec
Driscoll, L.S.
d780b102-86d0-40ae-b8e6-a0eaf8f6879c
Chattopadhyay, S.
4a7c7b4f-f3fb-41ee-8eb2-9eb9bf6706ee
Kwa, K.s.K.
9fce46b5-ed7f-4346-90be-3e5f888108e1
Waite, A.
8377b573-54a6-4c2c-a38e-ac8dbac9f110
Tang, Y.T.
e944297b-6a69-4f74-9d6d-59f0751b3975
Evans, A.G.R.
082f720d-3830-46d7-ba87-b058af733bc3
Zhang, Jing
722d2564-f8ae-40f1-b1e1-07896b67a0d8

Olsen, Sarah H., O'Neill, A.G., Driscoll, L.S., Chattopadhyay, S., Kwa, K.s.K., Waite, A., Tang, Y.T., Evans, A.G.R. and Zhang, Jing (2004) Optimization of alloy composition for high-performance strained-Si-SiGeN-channel MOSFETs. IEEE Transactions on Elect Devices, 51 (7), 1156-1163. (doi:10.1109/TED.2004.830656).

Record type: Article

Abstract

On-state and off-state performance of strained- Si–SiGe n-channel MOSFETs have been investigated as a function of SiGe virtual substrate alloy composition. Performance gains in terms of on-state drain current and maximum transconductance of up to 220% are demonstrated for strained-Si–SiGe devices compared with Si controls. Device performance is found to peak using a virtual substrate composition of Si0.75Ge0.25. MOSFET fabrication used high thermal budget processing and good gate oxide quality has been maintained for virtual substrates having Ge compositions up to 30%. Off-state characteristics are found to be more sensitive to strain relaxation than on-state characteristics.

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More information

Published date: July 2004
Additional Information: Y.T. Tang, A.M. Waite, C. Cerrina and A.G.R. Evans were with the Department of Electronics and Computer Science, University of Southampton.
Keywords: Drain current enhancement, mobility enhancement, n-MOSFETs, silicon-germanium (SiGe), strained-Silicon, thermal budget, transconductance enhancement, virtual substrate
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 260261
URI: http://eprints.soton.ac.uk/id/eprint/260261
PURE UUID: 03e3bc72-388a-473a-87b4-02c2107d71e9

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Date deposited: 18 Jan 2005
Last modified: 14 Mar 2024 06:35

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Contributors

Author: Sarah H. Olsen
Author: A.G. O'Neill
Author: L.S. Driscoll
Author: S. Chattopadhyay
Author: K.s.K. Kwa
Author: A. Waite
Author: Y.T. Tang
Author: A.G.R. Evans
Author: Jing Zhang

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