Optimization of alloy composition for high-performance strained-Si-SiGeN-channel MOSFETs

Olsen, S.H., O'Neill, A.G., Driscoll, L.S., Chattopadhyay, S., Kwa, K.s.K., Waite, A., Tang, Y.T., Evans, A.G.R. and Zhang, J. (2004) Optimization of alloy composition for high-performance strained-Si-SiGeN-channel MOSFETs IEEE Transactions on Elect Devices, 51, (7), pp. 1156-1163.


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Abstract—On-state and off-state performance of strained- Si–SiGe n-channel MOSFETs have been investigated as a function of SiGe virtual substrate alloy composition. Performance gains in terms of on-state drain current and maximum transconductance of up to 220% are demonstrated for strained-Si–SiGe devices compared with Si controls. Device performance is found to peak using a virtual substrate composition of Si0 75Ge0 25. MOSFET fabrication used high thermal budget processing and good gate oxide quality has been maintained for virtual substrates having Ge compositions up to 30%. Off-state characteristics are found to be more sensitive to strain relaxation than on-state characteristics. Index Terms—Drain current enhancement, mobility enhancement, n-MOSFETs, silicon-germanium (SiGe), strained-Silicon, thermal budget, transconductance enhancement, virtual substrate.

Item Type: Article
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 260261
Date :
Date Event
July 2004Published
Date Deposited: 18 Jan 2005
Last Modified: 17 Apr 2017 22:16
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/260261

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