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Development of small silicon modulators in SOI

Development of small silicon modulators in SOI
Development of small silicon modulators in SOI
Silicon-based optical modulators are expected to be important components in some optical networks. The optical modulation mechanism can be achieved either via the plasma dispersion effect, or by thermal means. Both are relatively slow processes when utilized in large (multi micron) waveguide structures, which researchers tend to concentrate on for ease of coupling. Using large waveguide structures limits the operating speed and hence excludes the applicability of these devices in areas where higher speeds are required. This limitation could be overcome by using smaller waveguides (of the order of 1µm). In this paper, we present the basic operating mechanism, design, and fabrication details of an optimum three terminal p-i-n diode based optical phase modulator based on Silicon-On-Insulator (501). The device was optimised via electrical and optical modeling and is predicted to operated at 1.3GHz with a power reduction of 900%, as compared to previously published designs.
Png, C.E.
ed888ad9-41f4-4ecb-83f6-c8f7ac652c2f
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Atta, R.M.H.
3d1e5561-86dc-45d1-a70c-05356e379190
Ensell, G.
48fe0996-1c6b-4816-8bd0-0a3234d36ae8
Evans, A.G.R.
082f720d-3830-46d7-ba87-b058af733bc3
Png, C.E.
ed888ad9-41f4-4ecb-83f6-c8f7ac652c2f
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Atta, R.M.H.
3d1e5561-86dc-45d1-a70c-05356e379190
Ensell, G.
48fe0996-1c6b-4816-8bd0-0a3234d36ae8
Evans, A.G.R.
082f720d-3830-46d7-ba87-b058af733bc3

Png, C.E., Reed, G.T., Atta, R.M.H., Ensell, G. and Evans, A.G.R. (2003) Development of small silicon modulators in SOI. Integrated Optoelectronics Devices, 2003, San Jose, Cal.. 25 - 31 Jan 2003. (doi:10.1117/12.476666).

Record type: Conference or Workshop Item (Paper)

Abstract

Silicon-based optical modulators are expected to be important components in some optical networks. The optical modulation mechanism can be achieved either via the plasma dispersion effect, or by thermal means. Both are relatively slow processes when utilized in large (multi micron) waveguide structures, which researchers tend to concentrate on for ease of coupling. Using large waveguide structures limits the operating speed and hence excludes the applicability of these devices in areas where higher speeds are required. This limitation could be overcome by using smaller waveguides (of the order of 1µm). In this paper, we present the basic operating mechanism, design, and fabrication details of an optimum three terminal p-i-n diode based optical phase modulator based on Silicon-On-Insulator (501). The device was optimised via electrical and optical modeling and is predicted to operated at 1.3GHz with a power reduction of 900%, as compared to previously published designs.

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Published date: 2003
Venue - Dates: Integrated Optoelectronics Devices, 2003, San Jose, Cal., 2003-01-25 - 2003-01-31
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 260463
URI: https://eprints.soton.ac.uk/id/eprint/260463
PURE UUID: 7ea921c9-658c-4a37-ae49-5221b0ad610d

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Date deposited: 07 Feb 2005
Last modified: 05 Oct 2018 12:11

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Contributors

Author: C.E. Png
Author: G.T. Reed
Author: R.M.H. Atta
Author: G. Ensell
Author: A.G.R. Evans

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