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SiGe Heterojunction Bipolar Transistors on Bonded SOI Incorporating Buried Silicide Layers

SiGe Heterojunction Bipolar Transistors on Bonded SOI Incorporating Buried Silicide Layers
SiGe Heterojunction Bipolar Transistors on Bonded SOI Incorporating Buried Silicide Layers
A technology is described for fabricating SiGe Heterojunction Bipolar Transistors (HBTs) on wafer bonded SOI substrates that incorporate buried tungsten silicide layers for collector resistance reduction or buried groundplanes for crosstalk suppression. The physical structure of the devices is characterized using cross-section TEM, and the electrical properties of the buried tungsten silicide layer are characterized using sheet resistance measurements as a function of bond temperature. Possible contamination issues associated with the buried tungsten silicide layer are investigated by measuring the collector/base reverse diode characteristics. A resistivity of 50ohm.cm is obtained for the buried silicide layer for a bond anneal of 120mins at 1000C. Collector/base reverse diode characteristics show a voltage dependence of approximately V1/2, indicating that the leakage current is due to Shockley-Read-Hall generation in the depletion region. Fitting of the current/voltage characteristics gives a generation lifetime of 90ns, which is as expected for the collector doping of 7x1017cm-3. These results indicate that the buried tungsten silicide layer does not have a serious impact on junction leakage.
SiGe, HBT, bipolar transistor, silicide, SOI, wafer bonding
317-324
Bain, M.
d1f75ae2-c2c8-42c2-908e-5f3b394b4cf3
El Mubarek, H.A.W.
08195505-5e00-40a6-bc9f-ebbf2a2fbf63
Bonar, J.M.
12d01a95-92f9-4aa1-bce0-c857451cbbfe
Wang, Y.
23c775f0-3cac-44d5-9e16-2098959c493b
Buiu, O.
a994b22e-018b-4355-abd5-0227724f2a1a
Gamble, H.
de02414c-a134-4046-a7e1-66b12bba78f6
Armstrong, B.M.
ebaa1599-84a6-462e-a196-0d99e0f353d7
Hemment, P.L.F.
198ac06e-1c48-4422-a3a4-de753f22dec3
Hall, S.
a11a8f8b-d6fb-47a7-82b1-1f76d2f170dc
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Bain, M.
d1f75ae2-c2c8-42c2-908e-5f3b394b4cf3
El Mubarek, H.A.W.
08195505-5e00-40a6-bc9f-ebbf2a2fbf63
Bonar, J.M.
12d01a95-92f9-4aa1-bce0-c857451cbbfe
Wang, Y.
23c775f0-3cac-44d5-9e16-2098959c493b
Buiu, O.
a994b22e-018b-4355-abd5-0227724f2a1a
Gamble, H.
de02414c-a134-4046-a7e1-66b12bba78f6
Armstrong, B.M.
ebaa1599-84a6-462e-a196-0d99e0f353d7
Hemment, P.L.F.
198ac06e-1c48-4422-a3a4-de753f22dec3
Hall, S.
a11a8f8b-d6fb-47a7-82b1-1f76d2f170dc
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Bain, M., El Mubarek, H.A.W., Bonar, J.M., Wang, Y., Buiu, O., Gamble, H., Armstrong, B.M., Hemment, P.L.F., Hall, S. and Ashburn, P. (2005) SiGe Heterojunction Bipolar Transistors on Bonded SOI Incorporating Buried Silicide Layers. IEEE Transactions on Electron Devices, 52 (3), 317-324.

Record type: Article

Abstract

A technology is described for fabricating SiGe Heterojunction Bipolar Transistors (HBTs) on wafer bonded SOI substrates that incorporate buried tungsten silicide layers for collector resistance reduction or buried groundplanes for crosstalk suppression. The physical structure of the devices is characterized using cross-section TEM, and the electrical properties of the buried tungsten silicide layer are characterized using sheet resistance measurements as a function of bond temperature. Possible contamination issues associated with the buried tungsten silicide layer are investigated by measuring the collector/base reverse diode characteristics. A resistivity of 50ohm.cm is obtained for the buried silicide layer for a bond anneal of 120mins at 1000C. Collector/base reverse diode characteristics show a voltage dependence of approximately V1/2, indicating that the leakage current is due to Shockley-Read-Hall generation in the depletion region. Fitting of the current/voltage characteristics gives a generation lifetime of 90ns, which is as expected for the collector doping of 7x1017cm-3. These results indicate that the buried tungsten silicide layer does not have a serious impact on junction leakage.

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Published date: April 2005
Keywords: SiGe, HBT, bipolar transistor, silicide, SOI, wafer bonding
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 260749
URI: https://eprints.soton.ac.uk/id/eprint/260749
PURE UUID: 31640df1-1fc7-4365-8063-f52e297c6268

Catalogue record

Date deposited: 14 Apr 2005
Last modified: 24 Oct 2017 16:31

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