El Mubarek, H.A.W., Karunaratne, M., Bonar, J.M., Dilliway, G.D., Wang, Y., Hemment, P.L.F., Willoughby, A.F. and Ashburn, P. (2005) Effect of Fluorine Implantation Dose on Boron Transient Enhanced Diffusion and Boron Thermal Diffusion in Si1-xGex. IEEE Transactions on Electron Devices, 52 (4), 518-526.
Record type:
Article
More information
Published date: April 2005
Keywords:
fluorine, diffusion, TED, boron diffusion, SiGe
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 260750
URI: http://eprints.soton.ac.uk/id/eprint/260750
PURE UUID: c98df115-f4c0-4b7b-9541-6dcc7040cee9
Catalogue record
Date deposited: 14 Apr 2005
Last modified: 14 Mar 2024 06:42
Export record
Contributors
Author:
H.A.W. El Mubarek
Author:
M. Karunaratne
Author:
J.M. Bonar
Author:
G.D. Dilliway
Author:
Y. Wang
Author:
P.L.F. Hemment
Author:
A.F. Willoughby
Author:
P. Ashburn
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.