Diffusion in SiGe: defect injection studies on Sb, As and B
Diffusion in SiGe: defect injection studies on Sb, As and B
The Electrochemical Society
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Uppal, S
d67df8ab-cae8-4474-86ac-de9373953ec6
Karunaratne, M S A
170fefcd-474c-4641-8389-2d886766feb0
Willoughby, A F
4cfa50bd-a80a-4aea-80be-0c478b04525f
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
October 2004
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Uppal, S
d67df8ab-cae8-4474-86ac-de9373953ec6
Karunaratne, M S A
170fefcd-474c-4641-8389-2d886766feb0
Willoughby, A F
4cfa50bd-a80a-4aea-80be-0c478b04525f
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Bonar, J M, Uppal, S, Karunaratne, M S A, Willoughby, A F and Ashburn, P
(2004)
Diffusion in SiGe: defect injection studies on Sb, As and B.
In ECS Meeting Abstracts 2004.
The Electrochemical Society..
Record type:
Conference or Workshop Item
(Paper)
This record has no associated files available for download.
More information
Published date: October 2004
Venue - Dates:
ECS Meeting: 2004 Joint International Meeting, , Honalulu, United States, 2004-10-03 - 2004-10-08
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 260757
URI: http://eprints.soton.ac.uk/id/eprint/260757
PURE UUID: 521d4137-9e0e-494e-ad91-14b4828ca16b
Catalogue record
Date deposited: 14 Apr 2005
Last modified: 19 Feb 2024 15:08
Export record
Contributors
Author:
J M Bonar
Author:
S Uppal
Author:
M S A Karunaratne
Author:
A F Willoughby
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics