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Diffusion in SiGe: defect injection studies on Sb, As and B

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Citation

Bonar, J M, Uppal, S, Karunaratne, M S A, Willoughby, A F and Ashburn, P (2004) Diffusion in SiGe: defect injection studies on Sb, As and B Electrochemical Soc. Meeting: SiGe Materials, Processing and Devices, Honolulu

More information

Published date: October 2004
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 260757
URI: http://eprints.soton.ac.uk/id/eprint/260757
PURE UUID: 521d4137-9e0e-494e-ad91-14b4828ca16b

Catalogue record

Date deposited: 14 Apr 2005
Last modified: 18 Jul 2017 09:09

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Contributors

Author: J M Bonar
Author: S Uppal
Author: M S A Karunaratne
Author: A F Willoughby
Author: P Ashburn

University divisions


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