Diffusion in SiGe: defect injection studies on Sb, As and B
Diffusion in SiGe: defect injection studies on Sb, As and B
Bonar, J M
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Uppal, S
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Karunaratne, M S A
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Willoughby, A F
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Ashburn, P
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October 2004
Bonar, J M
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Uppal, S
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Karunaratne, M S A
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Willoughby, A F
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Ashburn, P
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Bonar, J M, Uppal, S, Karunaratne, M S A, Willoughby, A F and Ashburn, P
(2004)
Diffusion in SiGe: defect injection studies on Sb, As and B.
Electrochemical Soc. Meeting: SiGe Materials, Processing and Devices, Honolulu.
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More information
Published date: October 2004
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 260757
URI: http://eprints.soton.ac.uk/id/eprint/260757
PURE UUID: 521d4137-9e0e-494e-ad91-14b4828ca16b
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Date deposited: 14 Apr 2005
Last modified: 08 Jan 2022 14:43
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Contributors
Author:
J M Bonar
Author:
S Uppal
Author:
M S A Karunaratne
Author:
A F Willoughby
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