Zhang, J, Neave, J H, Li, X B, Fewster, P F, El Mubarek, H A W, Ashburn, P, Mitrovic, I Z, Buiu, O and Hall, S (2004) Growth of SiGe layers by GSMBE and their characterisation by X-ray techniques. SiGe: Materials, Processing, and Devices 1st International Symposium : Electrochemical Society, , Honolulu, United States. 02 - 08 Oct 2004.
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Published date: October 2004
Venue - Dates:
SiGe: Materials, Processing, and Devices 1st International Symposium : Electrochemical Society, , Honolulu, United States, 2004-10-02 - 2004-10-08
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 260760
URI: http://eprints.soton.ac.uk/id/eprint/260760
PURE UUID: 6020612c-13ee-4aa3-b12f-893f7fe0513b
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Date deposited: 14 Apr 2005
Last modified: 12 Dec 2021 02:48
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Contributors
Author:
J Zhang
Author:
J H Neave
Author:
X B Li
Author:
P F Fewster
Author:
H A W El Mubarek
Author:
P Ashburn
Author:
I Z Mitrovic
Author:
O Buiu
Author:
S Hall
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