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Growth of SiGe layers by GSMBE and their characterisation by X-ray techniques

Record type: Article

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Citation

Zhang, J, Neave, J H, Li, X B, Fewster, P F, El Mubarek, H A W, Ashburn, P, Mitrovic, I Z, Buiu, O and Hall, S (2004) Growth of SiGe layers by GSMBE and their characterisation by X-ray techniques Electrochemical Soc. Meeting: SiGe Materials, Processing and Devices, Honolulu

More information

Published date: October 2004
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 260760
URI: http://eprints.soton.ac.uk/id/eprint/260760
PURE UUID: 6020612c-13ee-4aa3-b12f-893f7fe0513b

Catalogue record

Date deposited: 14 Apr 2005
Last modified: 18 Jul 2017 09:09

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Contributors

Author: J Zhang
Author: J H Neave
Author: X B Li
Author: P F Fewster
Author: H A W El Mubarek
Author: P Ashburn
Author: I Z Mitrovic
Author: O Buiu
Author: S Hall

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