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GSMBE growth and structural characterisation of SiGeC layers for HBT

Record type: Article

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Citation

Zhang, J, Neave, J H, Li, X B, Fewster, P F, El Mubarek, H A W, Ashburn, P, Mitrovic, I Z, Buiu, O and Hall, S (2004) GSMBE growth and structural characterisation of SiGeC layers for HBT MBE2004

More information

Published date: August 2004
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 260765
URI: http://eprints.soton.ac.uk/id/eprint/260765
PURE UUID: 154196b7-620a-4fc9-bbf9-ef901c522bdf

Catalogue record

Date deposited: 14 Apr 2005
Last modified: 18 Jul 2017 09:09

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Contributors

Author: J Zhang
Author: J H Neave
Author: X B Li
Author: P F Fewster
Author: H A W El Mubarek
Author: P Ashburn
Author: I Z Mitrovic
Author: O Buiu
Author: S Hall

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