The University of Southampton
University of Southampton Institutional Repository

Strained-Si n-MOS surface-channel and buried Si0.7Ge0.3 compressively-strained p-MOS fabricated in a 0.25 mum heterostructure CMOS process

Strained-Si n-MOS surface-channel and buried Si0.7Ge0.3 compressively-strained p-MOS fabricated in a 0.25 mum heterostructure CMOS process
Strained-Si n-MOS surface-channel and buried Si0.7Ge0.3 compressively-strained p-MOS fabricated in a 0.25 mum heterostructure CMOS process
A 0.25 mum complimentary metal oxide semiconductor (CMOS) process has been used to fabricate surface channel strained-Si n-MOS devices and buried, compressively-strained-Si0.7Ge0.3 channel p-MOS. Enhancements in performance of on-current, transconductance and mobility over bulk, relaxed Si CMOS devices are demonstrated for both n- and p-MOS devices for all gate lengths fabricated from 0.1 up to 10 mum. The performance is compared to surface channel strained-Si CMOS which is superior to the buried channel results. Possible reasons are discussed. (C) 2004 Elsevier Ltd. All rights reserved.
CMOS, strained-Si, SiGe
343-346
Paul, D.J.
d16dbdf8-e83a-4629-810b-dd877ce34e34
Temple, M.
c60fe3ac-c4bc-4053-a534-b952e6f9376c
Olsen, S.H.
c6d5e012-c9f3-4f1b-af45-b624a863e152
ONeill, A.G.
6345098a-2705-4ba4-9f43-b83e044db25b
Tang, Y.T.
e944297b-6a69-4f74-9d6d-59f0751b3975
Waite, A.M.
3badd40f-fa77-443f-8c8c-baede8a20dbd
Cerrina, C.
8e719190-b5dd-45c1-8854-2b641cee104c
Evans, A.G.R.
082f720d-3830-46d7-ba87-b058af733bc3
Li, X.
df4a6c0e-3b99-4c6a-9be4-ab53d0541c11
Zhang, J.
722d2564-f8ae-40f1-b1e1-07896b67a0d8
Norris, D.J.
5491f804-8935-48d9-8a58-18e2c5de777f
Cullis, A.G.
b1bfdce6-de34-4a0b-a239-0c00703bfbea
Paul, D.J.
d16dbdf8-e83a-4629-810b-dd877ce34e34
Temple, M.
c60fe3ac-c4bc-4053-a534-b952e6f9376c
Olsen, S.H.
c6d5e012-c9f3-4f1b-af45-b624a863e152
ONeill, A.G.
6345098a-2705-4ba4-9f43-b83e044db25b
Tang, Y.T.
e944297b-6a69-4f74-9d6d-59f0751b3975
Waite, A.M.
3badd40f-fa77-443f-8c8c-baede8a20dbd
Cerrina, C.
8e719190-b5dd-45c1-8854-2b641cee104c
Evans, A.G.R.
082f720d-3830-46d7-ba87-b058af733bc3
Li, X.
df4a6c0e-3b99-4c6a-9be4-ab53d0541c11
Zhang, J.
722d2564-f8ae-40f1-b1e1-07896b67a0d8
Norris, D.J.
5491f804-8935-48d9-8a58-18e2c5de777f
Cullis, A.G.
b1bfdce6-de34-4a0b-a239-0c00703bfbea

Paul, D.J., Temple, M., Olsen, S.H., ONeill, A.G., Tang, Y.T., Waite, A.M., Cerrina, C., Evans, A.G.R., Li, X., Zhang, J., Norris, D.J. and Cullis, A.G. (2005) Strained-Si n-MOS surface-channel and buried Si0.7Ge0.3 compressively-strained p-MOS fabricated in a 0.25 mum heterostructure CMOS process. Materials Science in Semiconductor Processing, 8 (1-3), 343-346.

Record type: Article

Abstract

A 0.25 mum complimentary metal oxide semiconductor (CMOS) process has been used to fabricate surface channel strained-Si n-MOS devices and buried, compressively-strained-Si0.7Ge0.3 channel p-MOS. Enhancements in performance of on-current, transconductance and mobility over bulk, relaxed Si CMOS devices are demonstrated for both n- and p-MOS devices for all gate lengths fabricated from 0.1 up to 10 mum. The performance is compared to surface channel strained-Si CMOS which is superior to the buried channel results. Possible reasons are discussed. (C) 2004 Elsevier Ltd. All rights reserved.

Full text not available from this repository.

More information

Published date: February 2005
Keywords: CMOS, strained-Si, SiGe
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 260880
URI: https://eprints.soton.ac.uk/id/eprint/260880
PURE UUID: 2a055fb1-45e3-486b-9350-1df96277b481

Catalogue record

Date deposited: 17 May 2005
Last modified: 16 Jul 2019 22:49

Export record

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of https://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×