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Comparison between bulk micromachined and CMOS X-ray detectors

Rocha, J.G., Schabmueller, C.G.J., Ramos, N.F., Lanceros-Mendez, S., Moreira, M.V., Evans, A.G.R., Wolffenbuttel, R.F. and Correia, J.H. (2004) Comparison between bulk micromachined and CMOS X-ray detectors Sensors and Actuators A: Physical, 115, (2-3), pp. 215-220.

Record type: Article


This paper compares two X-ray detectors fabricated using two different technologies: one is based on a bulk micromachined silicon photodetector and the other is based on a standard CMOS photodetector. The working principle of the two detectors is similar: a scintillating layer of CsI:TI is placed above the photodetector, so the X-rays are first converted into visible light (560 nm) which is then converted into an electrical signal by the photodetector. The different aspects of the fabrication and the experimental results of both X-ray detectors are presented and discussed. (C) 2004 Elsevier B.V. All rights reserved.

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Published date: September 2004
Keywords: X-rays, scintillator, micromachining
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 260882
ISSN: 0924-4247
PURE UUID: cfd41a95-be27-403a-8512-81ed10471d66

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Date deposited: 17 May 2005
Last modified: 18 Jul 2017 09:08

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Author: J.G. Rocha
Author: C.G.J. Schabmueller
Author: N.F. Ramos
Author: S. Lanceros-Mendez
Author: M.V. Moreira
Author: A.G.R. Evans
Author: R.F. Wolffenbuttel
Author: J.H. Correia

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