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Observation of Fowler-Nordheim tunneling for room temperature operation of the vertical metal-oxide tunnel transistor

Observation of Fowler-Nordheim tunneling for room temperature operation of the vertical metal-oxide tunnel transistor
Observation of Fowler-Nordheim tunneling for room temperature operation of the vertical metal-oxide tunnel transistor
We propose a new field effect transistor, the vertical metal-oxide tunnel transistor (VMOTT) which operates using gate modulation of the Fowler-Nordheim tunneling current through the channel oxide. The VMOTT has significant advantages over the metal-oxide-semiconductor field effect transistor (MOSFET) in device scaling. In order to allow room-temperature operation of the VMOTT, the tunnel oxide has to be optimized for the metal-to-oxide barrier height and the current-voltage characteristics. We have grown TiO2 layers as the tunnel oxide by oxidising 5-10 nm thick Ti metal films vacuum-evaporated on silicon substrates, and characterized the films by current-voltage and capacitance-voltage techniques. The quality of the oxide films showed variations, depending on the oxidation temperatures in the range of 300-500 C. Some of the samples were subjected to a post-oxidation anneal in nitrogen ambient at 700 C. Fowler-Nordheim tunneling was observed clearly at room temperature, which was further confirmed at low temperatures in the samples oxidised at 500 C and annealed subsequently.
VMOTT, Fowler-Nordheim tunneling, TiO2
Mallik, Kanad
013bdafd-6ae0-463e-89a4-6ef1301c5c2f
Chong, Lit Ho
73bcd3b8-6d70-404a-94a2-da029feabfa9
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Mallik, Kanad
013bdafd-6ae0-463e-89a4-6ef1301c5c2f
Chong, Lit Ho
73bcd3b8-6d70-404a-94a2-da029feabfa9
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c

Mallik, Kanad, Chong, Lit Ho and de Groot, Kees (2004) Observation of Fowler-Nordheim tunneling for room temperature operation of the vertical metal-oxide tunnel transistor. IVC-16 (16th International Vacuum Congress), Venice, Italy. 27 Jun - 01 Jul 2004.

Record type: Conference or Workshop Item (Other)

Abstract

We propose a new field effect transistor, the vertical metal-oxide tunnel transistor (VMOTT) which operates using gate modulation of the Fowler-Nordheim tunneling current through the channel oxide. The VMOTT has significant advantages over the metal-oxide-semiconductor field effect transistor (MOSFET) in device scaling. In order to allow room-temperature operation of the VMOTT, the tunnel oxide has to be optimized for the metal-to-oxide barrier height and the current-voltage characteristics. We have grown TiO2 layers as the tunnel oxide by oxidising 5-10 nm thick Ti metal films vacuum-evaporated on silicon substrates, and characterized the films by current-voltage and capacitance-voltage techniques. The quality of the oxide films showed variations, depending on the oxidation temperatures in the range of 300-500 C. Some of the samples were subjected to a post-oxidation anneal in nitrogen ambient at 700 C. Fowler-Nordheim tunneling was observed clearly at room temperature, which was further confirmed at low temperatures in the samples oxidised at 500 C and annealed subsequently.

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More information

Published date: 2004
Additional Information: Event Dates: 28th June - 02 July, 2004
Venue - Dates: IVC-16 (16th International Vacuum Congress), Venice, Italy, 2004-06-27 - 2004-07-01
Keywords: VMOTT, Fowler-Nordheim tunneling, TiO2
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 260965
URI: http://eprints.soton.ac.uk/id/eprint/260965
PURE UUID: 5adcad1e-45f9-44a0-8aa3-7f0d862d77d2
ORCID for Kees de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 10 Jun 2005
Last modified: 30 Jan 2020 01:31

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