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Non-selective growth of SiGe heterojunction bipolar transistor layers at 700C with dual control of n and p type dopant profiles

Non-selective growth of SiGe heterojunction bipolar transistor layers at 700C with dual control of n and p type dopant profiles
Non-selective growth of SiGe heterojunction bipolar transistor layers at 700C with dual control of n and p type dopant profiles
This paper describes the growth of the collector, base and emitter layers of a SiGe HBT in a single epitaxy process. A non-selective SiGe heterojunction bipolar transistor growth process at 700C has been developed, which combines n-type doping for the Si collector, p-type doping for the SiGe base and n-type doping for the Si emitter cap. Control of the collector doping concentration by varying the growth conditions is shown. The boron tailing edge from the SiGe base into the Si emitter layer was removed by interupting the growth process with a hydrogen flow after the SiGe base growth but before the Si emitter growth to remove the dopant gas from the chamber. The layer thicknesses are compared using three different analytical techniques: SIMS, TEM and spectro-ellipsometry. A good agreement was obtained for the three different methods.
261-265
El Mubarek, H.A.W.
08195505-5e00-40a6-bc9f-ebbf2a2fbf63
Bonar, J.M.
12d01a95-92f9-4aa1-bce0-c857451cbbfe
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Wang, Y.
23c775f0-3cac-44d5-9e16-2098959c493b
Hemment, P.
fc110118-1ce0-4c91-82d8-e310a3f5bc3c
Buiu, O.
a994b22e-018b-4355-abd5-0227724f2a1a
Hall, S.
a11a8f8b-d6fb-47a7-82b1-1f76d2f170dc
El Mubarek, H.A.W.
08195505-5e00-40a6-bc9f-ebbf2a2fbf63
Bonar, J.M.
12d01a95-92f9-4aa1-bce0-c857451cbbfe
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Wang, Y.
23c775f0-3cac-44d5-9e16-2098959c493b
Hemment, P.
fc110118-1ce0-4c91-82d8-e310a3f5bc3c
Buiu, O.
a994b22e-018b-4355-abd5-0227724f2a1a
Hall, S.
a11a8f8b-d6fb-47a7-82b1-1f76d2f170dc

El Mubarek, H.A.W., Bonar, J.M., Ashburn, P., Wang, Y., Hemment, P., Buiu, O. and Hall, S. (2003) Non-selective growth of SiGe heterojunction bipolar transistor layers at 700C with dual control of n and p type dopant profiles. Journal of Materials Science: Materials in Electronics, 14 (5), 261-265.

Record type: Article

Abstract

This paper describes the growth of the collector, base and emitter layers of a SiGe HBT in a single epitaxy process. A non-selective SiGe heterojunction bipolar transistor growth process at 700C has been developed, which combines n-type doping for the Si collector, p-type doping for the SiGe base and n-type doping for the Si emitter cap. Control of the collector doping concentration by varying the growth conditions is shown. The boron tailing edge from the SiGe base into the Si emitter layer was removed by interupting the growth process with a hydrogen flow after the SiGe base growth but before the Si emitter growth to remove the dopant gas from the chamber. The layer thicknesses are compared using three different analytical techniques: SIMS, TEM and spectro-ellipsometry. A good agreement was obtained for the three different methods.

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More information

Published date: 2003
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 261170
URI: http://eprints.soton.ac.uk/id/eprint/261170
PURE UUID: b3acf87f-ccb1-45c8-bdbf-c392b04cc756

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Date deposited: 02 Sep 2005
Last modified: 25 Mar 2020 17:38

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Contributors

Author: H.A.W. El Mubarek
Author: J.M. Bonar
Author: P. Ashburn
Author: Y. Wang
Author: P. Hemment
Author: O. Buiu
Author: S. Hall

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