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Study of fluorine behaviour in silicon by selective point defect injection

Study of fluorine behaviour in silicon by selective point defect injection
Study of fluorine behaviour in silicon by selective point defect injection
This letter reports a point defect injection study of 185 keV 2.3x1015cm?2 fluorine implanted silicon. After an inert anneal at 1000°C, fluorine peaks are seen at depths of 0.3Rp and Rp and a shoulder between 0.5–0.7Rp. The shallow peak (at 0.3Rp) is significantly smaller under interstitial injection than under both inert and vacancy injection conditions. For a longer anneal under interstitial injection, both the shallow peak and the shoulder are eliminated. These results support earlier work suggesting that the shallow fluorine peak is due to vacancy-fluorine clusters which are responsible for suppression of boron thermal diffusion in silicon. The elimination of the shallow fluorine peak and the shoulder is explained by the annihilation of vacancies in the clusters with injected interstitials.
0003-6951
11902
Kham, M.N.
7b3b31b2-8c04-438f-9ab0-c9aea8b9fbf9
El Mubarek, H.A.W.
08195505-5e00-40a6-bc9f-ebbf2a2fbf63
Bonar, J.M.
12d01a95-92f9-4aa1-bce0-c857451cbbfe
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Kham, M.N.
7b3b31b2-8c04-438f-9ab0-c9aea8b9fbf9
El Mubarek, H.A.W.
08195505-5e00-40a6-bc9f-ebbf2a2fbf63
Bonar, J.M.
12d01a95-92f9-4aa1-bce0-c857451cbbfe
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Kham, M.N., El Mubarek, H.A.W., Bonar, J.M. and Ashburn, P. (2005) Study of fluorine behaviour in silicon by selective point defect injection. Applied Physics Letters, 87 (1), 11902.

Record type: Article

Abstract

This letter reports a point defect injection study of 185 keV 2.3x1015cm?2 fluorine implanted silicon. After an inert anneal at 1000°C, fluorine peaks are seen at depths of 0.3Rp and Rp and a shoulder between 0.5–0.7Rp. The shallow peak (at 0.3Rp) is significantly smaller under interstitial injection than under both inert and vacancy injection conditions. For a longer anneal under interstitial injection, both the shallow peak and the shoulder are eliminated. These results support earlier work suggesting that the shallow fluorine peak is due to vacancy-fluorine clusters which are responsible for suppression of boron thermal diffusion in silicon. The elimination of the shallow fluorine peak and the shoulder is explained by the annihilation of vacancies in the clusters with injected interstitials.

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Published date: June 2005
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 261173
URI: https://eprints.soton.ac.uk/id/eprint/261173
ISSN: 0003-6951
PURE UUID: 81c5ad92-9360-41c0-8935-602efff6b5a7

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Date deposited: 02 Sep 2005
Last modified: 18 Jul 2017 09:04

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