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GSMBE growth and structural characterisation of SiGeC layers for HBT

GSMBE growth and structural characterisation of SiGeC layers for HBT
GSMBE growth and structural characterisation of SiGeC layers for HBT
Gas source molecular beam epitaxy is used for the growth of SiGeC layers from disilane, germane and methylsilane precursors at low substrate temperatures. A systematic method of carbon concentration determination based on a combination of X-ray diffraction and X-ray reflectivity is examined. The grown layers were annealed using rapid thermal annealing and analysed with X-ray diffraction, X-ray reflectivity and secondary ion mass spectrometry. The recovery of compressive strain in the SiGeC layer is correlated to the loss of carbon through diffusion and indicates that the carbon atoms are incorporated substitutionally in the as-grown layers.
0022-0248
505-511
Zhang, J.
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Neave, J.H.
2544e8e1-d015-4c63-afef-b1577970629e
Li, X.B.
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Fewster, P.F.
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El Mubarek, H.A. W.
a8b079cb-24ea-41a1-8b39-99ceebc95710
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Mitrovic, I.Z.
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Buiu, O.
a994b22e-018b-4355-abd5-0227724f2a1a
Hall, S.
a11a8f8b-d6fb-47a7-82b1-1f76d2f170dc
Zhang, J.
722d2564-f8ae-40f1-b1e1-07896b67a0d8
Neave, J.H.
2544e8e1-d015-4c63-afef-b1577970629e
Li, X.B.
3d9437cd-b237-43db-b8ed-1bea97567d7b
Fewster, P.F.
4c7bf746-4d6d-4b70-a735-401f1390130f
El Mubarek, H.A. W.
a8b079cb-24ea-41a1-8b39-99ceebc95710
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Mitrovic, I.Z.
a1d3f694-b084-42b4-ac61-25a540be3e64
Buiu, O.
a994b22e-018b-4355-abd5-0227724f2a1a
Hall, S.
a11a8f8b-d6fb-47a7-82b1-1f76d2f170dc

Zhang, J., Neave, J.H., Li, X.B., Fewster, P.F., El Mubarek, H.A. W., Ashburn, P., Mitrovic, I.Z., Buiu, O. and Hall, S. (2005) GSMBE growth and structural characterisation of SiGeC layers for HBT. Journal of Crystal Growth, 278, 505-511. (doi:10.1016/j.jcrysgro.2004.12.147).

Record type: Article

Abstract

Gas source molecular beam epitaxy is used for the growth of SiGeC layers from disilane, germane and methylsilane precursors at low substrate temperatures. A systematic method of carbon concentration determination based on a combination of X-ray diffraction and X-ray reflectivity is examined. The grown layers were annealed using rapid thermal annealing and analysed with X-ray diffraction, X-ray reflectivity and secondary ion mass spectrometry. The recovery of compressive strain in the SiGeC layer is correlated to the loss of carbon through diffusion and indicates that the carbon atoms are incorporated substitutionally in the as-grown layers.

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Published date: 2005
Organisations: Nanoelectronics and Nanotechnology

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Local EPrints ID: 261175
URI: https://eprints.soton.ac.uk/id/eprint/261175
ISSN: 0022-0248
PURE UUID: 608e2325-d8e8-4788-8f05-54aa6a968dee

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Date deposited: 02 Sep 2005
Last modified: 19 Jul 2019 22:35

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Contributors

Author: J. Zhang
Author: J.H. Neave
Author: X.B. Li
Author: P.F. Fewster
Author: H.A. W. El Mubarek
Author: P. Ashburn
Author: I.Z. Mitrovic
Author: O. Buiu
Author: S. Hall

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