Metal catalyst-free low-temperature carbon nanotube growth on SiGe islands
Metal catalyst-free low-temperature carbon nanotube growth on SiGe islands
A metal-catalyst-free growth method of carbon nanotubes (CNTs) has been developed using chemical vapor deposition of CNTs on carbon-implanted SiGe islands on Si substrates. From scanning electron microscopy and Raman measurements, the fabricated CNTs are identified as single-walled CNTs with a diameter ranging from 1.2 to 1.6 nm. Essential parts of the substrate preparation after CVD SiGe growth and carbon implant are a chemical oxidization by hydrogen peroxide solution and a heat treatment at 1000°C prior to CNT growth. We believe that these processes enhance surface decomposition and assist the formation of carbon clusters, which play a role in seeding CNT growth. The growth technique is a practical method of growing metal-free CNTs for a variety of applications, while at the same time opening up the prospect of merging CNT devices into silicon very-large-scale-integration technology.
carbon nanotube
233110
Uchino, T.
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Bourdakos, K.N.
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de Groot, C.H.
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Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Kiziroglou, M.E.
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Dilliway, G.D.
755ac5bd-9e6f-45f6-ac19-7ce284d48b0e
Smith, D.C.
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June 2005
Uchino, T.
706196b8-2f2c-403d-97aa-2995eac8572b
Bourdakos, K.N.
6b01a41a-dfdb-45a2-bb1c-7e8052a78de0
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Kiziroglou, M.E.
5d55ba87-ea00-47fa-917b-c1e538ae6dd2
Dilliway, G.D.
755ac5bd-9e6f-45f6-ac19-7ce284d48b0e
Smith, D.C.
536ad98e-9c71-4171-a7b5-51d796090e5d
Uchino, T., Bourdakos, K.N., de Groot, C.H., Ashburn, P., Kiziroglou, M.E., Dilliway, G.D. and Smith, D.C.
(2005)
Metal catalyst-free low-temperature carbon nanotube growth on SiGe islands.
Applied Physics Letters, 86 (23), .
(doi:10.1063/1.1946191).
Abstract
A metal-catalyst-free growth method of carbon nanotubes (CNTs) has been developed using chemical vapor deposition of CNTs on carbon-implanted SiGe islands on Si substrates. From scanning electron microscopy and Raman measurements, the fabricated CNTs are identified as single-walled CNTs with a diameter ranging from 1.2 to 1.6 nm. Essential parts of the substrate preparation after CVD SiGe growth and carbon implant are a chemical oxidization by hydrogen peroxide solution and a heat treatment at 1000°C prior to CNT growth. We believe that these processes enhance surface decomposition and assist the formation of carbon clusters, which play a role in seeding CNT growth. The growth technique is a practical method of growing metal-free CNTs for a variety of applications, while at the same time opening up the prospect of merging CNT devices into silicon very-large-scale-integration technology.
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Published date: June 2005
Keywords:
carbon nanotube
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 261176
URI: http://eprints.soton.ac.uk/id/eprint/261176
ISSN: 0003-6951
PURE UUID: f933e20c-9d86-4471-bb8c-e392c0bc2881
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Date deposited: 02 Sep 2005
Last modified: 15 Mar 2024 03:11
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Contributors
Author:
T. Uchino
Author:
K.N. Bourdakos
Author:
M.E. Kiziroglou
Author:
G.D. Dilliway
Author:
D.C. Smith
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