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Electrical and Materials Characterisation of GSMBE Grown Si1-x-yGexCy Layers for Heterojunction Bipolar Transistor Applications

Electrical and Materials Characterisation of GSMBE Grown Si1-x-yGexCy Layers for Heterojunction Bipolar Transistor Applications
Electrical and Materials Characterisation of GSMBE Grown Si1-x-yGexCy Layers for Heterojunction Bipolar Transistor Applications
This paper reports on detailed materials and electrical characterization of strain-compensated Si1?x?yGexCy layers synthesized by gas source molecular beam epitaxy (GSMBE). Materials assessment included the application of spectroscopic ellipsometry (SE), x-ray diffraction (XRD) and high-resolution cross-section transmission electron microscopy (HRXTEM). An almost fully strain-compensated Si0.88Ge0.11C0.01 alloy with high substitutional carbon incorporation (XRD) and well-defined structure with coherent interfaces (HRXTEM) was produced. An increase of C content (up to 1.6%) resulted in a tensile strained SiGeC alloy and degraded electrical characteristics. The minority-carrier lifetime is a parameter strongly dependent on mid-gap energy band levels, which determine the leakage currents in heterojunction bipolar transistors, and it was assessed here using the capacitance-transient technique. Metal–oxide–semiconductor (MOS) test capacitors were fabricated on Si/SiGe/Si and Si/SiGeC/Si structures using low-temperature plasma oxidation for dielectric growth. The strain-free Si0.88Ge0.11C0.01 layers exhibit a minority-carrier lifetime, ?g, of ?0.1–0.2 µs which constitutes degradation of the carrier lifetime by two orders of magnitude compared to control SiGe layers. The obtained range of ?g is nevertheless sufficient for the successful application of epitaxial strain-compensated SiGeC layers in high performance heterojunction bipolar transistors (HBTs).
SiGeC, HBT, bipolar transistor
0268-1242
95-102
Mitrovic, I.Z.
a1d3f694-b084-42b4-ac61-25a540be3e64
Buiu, O.
a994b22e-018b-4355-abd5-0227724f2a1a
Hall, S.
a11a8f8b-d6fb-47a7-82b1-1f76d2f170dc
Zhang, J.
722d2564-f8ae-40f1-b1e1-07896b67a0d8
Wang, Y.
23c775f0-3cac-44d5-9e16-2098959c493b
Hemment, P.L.F.
198ac06e-1c48-4422-a3a4-de753f22dec3
El Mubarek, H.A.W.
08195505-5e00-40a6-bc9f-ebbf2a2fbf63
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Mitrovic, I.Z.
a1d3f694-b084-42b4-ac61-25a540be3e64
Buiu, O.
a994b22e-018b-4355-abd5-0227724f2a1a
Hall, S.
a11a8f8b-d6fb-47a7-82b1-1f76d2f170dc
Zhang, J.
722d2564-f8ae-40f1-b1e1-07896b67a0d8
Wang, Y.
23c775f0-3cac-44d5-9e16-2098959c493b
Hemment, P.L.F.
198ac06e-1c48-4422-a3a4-de753f22dec3
El Mubarek, H.A.W.
08195505-5e00-40a6-bc9f-ebbf2a2fbf63
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Mitrovic, I.Z., Buiu, O., Hall, S., Zhang, J., Wang, Y., Hemment, P.L.F., El Mubarek, H.A.W. and Ashburn, P. (2005) Electrical and Materials Characterisation of GSMBE Grown Si1-x-yGexCy Layers for Heterojunction Bipolar Transistor Applications. Semiconductor Science and Technology, 20, 95-102.

Record type: Article

Abstract

This paper reports on detailed materials and electrical characterization of strain-compensated Si1?x?yGexCy layers synthesized by gas source molecular beam epitaxy (GSMBE). Materials assessment included the application of spectroscopic ellipsometry (SE), x-ray diffraction (XRD) and high-resolution cross-section transmission electron microscopy (HRXTEM). An almost fully strain-compensated Si0.88Ge0.11C0.01 alloy with high substitutional carbon incorporation (XRD) and well-defined structure with coherent interfaces (HRXTEM) was produced. An increase of C content (up to 1.6%) resulted in a tensile strained SiGeC alloy and degraded electrical characteristics. The minority-carrier lifetime is a parameter strongly dependent on mid-gap energy band levels, which determine the leakage currents in heterojunction bipolar transistors, and it was assessed here using the capacitance-transient technique. Metal–oxide–semiconductor (MOS) test capacitors were fabricated on Si/SiGe/Si and Si/SiGeC/Si structures using low-temperature plasma oxidation for dielectric growth. The strain-free Si0.88Ge0.11C0.01 layers exhibit a minority-carrier lifetime, ?g, of ?0.1–0.2 µs which constitutes degradation of the carrier lifetime by two orders of magnitude compared to control SiGe layers. The obtained range of ?g is nevertheless sufficient for the successful application of epitaxial strain-compensated SiGeC layers in high performance heterojunction bipolar transistors (HBTs).

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Published date: 2005
Keywords: SiGeC, HBT, bipolar transistor
Organisations: Nanoelectronics and Nanotechnology

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Local EPrints ID: 261194
URI: https://eprints.soton.ac.uk/id/eprint/261194
ISSN: 0268-1242
PURE UUID: fabbeeba-56a5-4c71-b139-83e74234181a

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Date deposited: 06 Sep 2005
Last modified: 18 Jul 2017 09:04

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