Shiba, T, Kondo, M, Uchino, T, Murakoshi, H and Tamaki, Y (1996) Effect of rapid epitaxy in-situ phosphorus-doped polysilicon emitter on current-gain of bipolar transistors. IEEE Trans. Electron Devices, 43, 1281.
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Published date: 1996
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 262152
URI: http://eprints.soton.ac.uk/id/eprint/262152
PURE UUID: 282dd1bd-7a90-4f77-888e-e3fe72637304
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Date deposited: 27 Mar 2006
Last modified: 07 Jan 2022 21:11
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Contributors
Author:
T Shiba
Author:
M Kondo
Author:
T Uchino
Author:
H Murakoshi
Author:
Y Tamaki
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