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Effect of rapid epitaxy in-situ phosphorus-doped polysilicon emitter on current-gain of bipolar transistors

Effect of rapid epitaxy in-situ phosphorus-doped polysilicon emitter on current-gain of bipolar transistors
Effect of rapid epitaxy in-situ phosphorus-doped polysilicon emitter on current-gain of bipolar transistors
1281
Shiba, T
301a15ec-af81-42e2-9ea3-14d234cf1b22
Kondo, M
449d0757-0b63-491b-8631-56dd23b6e203
Uchino, T
5c7413a3-c3f6-41ee-8a74-1614054f63e4
Murakoshi, H
cacb3274-aa8d-4cea-bdcf-7d4b97a3c020
Tamaki, Y
4e1d73a1-9605-4e50-b624-041c9bf86dc0
Shiba, T
301a15ec-af81-42e2-9ea3-14d234cf1b22
Kondo, M
449d0757-0b63-491b-8631-56dd23b6e203
Uchino, T
5c7413a3-c3f6-41ee-8a74-1614054f63e4
Murakoshi, H
cacb3274-aa8d-4cea-bdcf-7d4b97a3c020
Tamaki, Y
4e1d73a1-9605-4e50-b624-041c9bf86dc0

Shiba, T, Kondo, M, Uchino, T, Murakoshi, H and Tamaki, Y (1996) Effect of rapid epitaxy in-situ phosphorus-doped polysilicon emitter on current-gain of bipolar transistors. IEEE Trans. Electron Devices, 43, 1281.

Record type: Article

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More information

Published date: 1996
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 262152
URI: http://eprints.soton.ac.uk/id/eprint/262152
PURE UUID: 282dd1bd-7a90-4f77-888e-e3fe72637304

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Date deposited: 27 Mar 2006
Last modified: 07 Jan 2022 21:11

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Contributors

Author: T Shiba
Author: M Kondo
Author: T Uchino
Author: H Murakoshi
Author: Y Tamaki

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