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Effect of rapid epitaxy in-situ phosphorus-doped polysilicon emitter on current-gain of bipolar transistors

Shiba, T, Kondo, M, Uchino, T, Murakoshi, H and Tamaki, Y (1996) Effect of rapid epitaxy in-situ phosphorus-doped polysilicon emitter on current-gain of bipolar transistors IEEE Trans. Electron Devices, 43, p. 1281.

Record type: Article

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Published date: 1996
Organisations: Nanoelectronics and Nanotechnology

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Local EPrints ID: 262152
URI: http://eprints.soton.ac.uk/id/eprint/262152
PURE UUID: 282dd1bd-7a90-4f77-888e-e3fe72637304

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Date deposited: 27 Mar 2006
Last modified: 18 Jul 2017 08:54

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Contributors

Author: T Shiba
Author: M Kondo
Author: T Uchino
Author: H Murakoshi
Author: Y Tamaki

University divisions

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