Effect of rapid epitaxy in-situ phosphorus-doped polysilicon emitter on current-gain of bipolar transistors


Shiba, T, Kondo, M, Uchino, T, Murakoshi, H and Tamaki, Y (1996) Effect of rapid epitaxy in-situ phosphorus-doped polysilicon emitter on current-gain of bipolar transistors IEEE Trans. Electron Devices, 43, p. 1281.

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Item Type: Article
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 262152
Date :
Date Event
1996Published
Date Deposited: 27 Mar 2006
Last Modified: 17 Apr 2017 21:46
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/262152

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