Shiba, T, Uchino, T, Ohnishi, K and Tamaki, Y (1996) In situ phosphorus-doped polysilicon emitter technology for very high-speed, small emitter bipolar transistors. IEEE Trans. Electron Devices, 43, 889.
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Published date: 1996
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 262154
URI: http://eprints.soton.ac.uk/id/eprint/262154
PURE UUID: cfe2b3fe-d350-4560-ac55-ffc6b9c12acc
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Date deposited: 27 Mar 2006
Last modified: 07 Jan 2022 23:56
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Contributors
Author:
T Shiba
Author:
T Uchino
Author:
K Ohnishi
Author:
Y Tamaki
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