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In situ phosphorus-doped polysilicon emitter technology for very high-speed, small emitter bipolar transistors

In situ phosphorus-doped polysilicon emitter technology for very high-speed, small emitter bipolar transistors
In situ phosphorus-doped polysilicon emitter technology for very high-speed, small emitter bipolar transistors
889
Shiba, T
301a15ec-af81-42e2-9ea3-14d234cf1b22
Uchino, T
5c7413a3-c3f6-41ee-8a74-1614054f63e4
Ohnishi, K
c4849a03-ca8c-4f2e-95f6-9f6511a651ed
Tamaki, Y
4e1d73a1-9605-4e50-b624-041c9bf86dc0
Shiba, T
301a15ec-af81-42e2-9ea3-14d234cf1b22
Uchino, T
5c7413a3-c3f6-41ee-8a74-1614054f63e4
Ohnishi, K
c4849a03-ca8c-4f2e-95f6-9f6511a651ed
Tamaki, Y
4e1d73a1-9605-4e50-b624-041c9bf86dc0

Shiba, T, Uchino, T, Ohnishi, K and Tamaki, Y (1996) In situ phosphorus-doped polysilicon emitter technology for very high-speed, small emitter bipolar transistors. IEEE Trans. Electron Devices, 43, 889.

Record type: Article

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More information

Published date: 1996
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 262154
URI: http://eprints.soton.ac.uk/id/eprint/262154
PURE UUID: cfe2b3fe-d350-4560-ac55-ffc6b9c12acc

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Date deposited: 27 Mar 2006
Last modified: 07 Jan 2022 23:56

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Contributors

Author: T Shiba
Author: T Uchino
Author: K Ohnishi
Author: Y Tamaki

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