In situ phosphorus-doped polysilicon emitter technology for very high-speed, small emitter bipolar transistors


Shiba, T, Uchino, T, Ohnishi, K and Tamaki, Y (1996) In situ phosphorus-doped polysilicon emitter technology for very high-speed, small emitter bipolar transistors IEEE Trans. Electron Devices, 43, p. 889.

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Item Type: Article
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 262154
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1996Published
Date Deposited: 27 Mar 2006
Last Modified: 17 Apr 2017 21:46
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/262154

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