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In situ phosphorus-doped polysilicon emitter technology for very high-speed, small emitter bipolar transistors

Shiba, T, Uchino, T, Ohnishi, K and Tamaki, Y (1996) In situ phosphorus-doped polysilicon emitter technology for very high-speed, small emitter bipolar transistors IEEE Trans. Electron Devices, 43, p. 889.

Record type: Article

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Published date: 1996
Organisations: Nanoelectronics and Nanotechnology

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Local EPrints ID: 262154
URI: http://eprints.soton.ac.uk/id/eprint/262154
PURE UUID: cfe2b3fe-d350-4560-ac55-ffc6b9c12acc

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Date deposited: 27 Mar 2006
Last modified: 18 Jul 2017 08:54

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Contributors

Author: T Shiba
Author: T Uchino
Author: K Ohnishi
Author: Y Tamaki

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