Uchino, T, Shiba, T, Kikuchi, T, Tamaki, Y, Watanabe, A and Kiyota, Y (1995) Very-high-speed silicon bipolar transistors with in-situ doped polysilicon emitter and rapid vapor-phase doping base. IEEE Trans. Electron Devices, 42, 406.
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Article
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Published date: 1995
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 262155
URI: http://eprints.soton.ac.uk/id/eprint/262155
PURE UUID: 4fc8ee1c-aab4-4a00-abe6-4b52eb48432f
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Date deposited: 27 Mar 2006
Last modified: 10 Dec 2021 21:25
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Contributors
Author:
T Uchino
Author:
T Shiba
Author:
T Kikuchi
Author:
Y Tamaki
Author:
A Watanabe
Author:
Y Kiyota
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