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Very-high-speed silicon bipolar transistors with in-situ doped polysilicon emitter and rapid vapor-phase doping base

Very-high-speed silicon bipolar transistors with in-situ doped polysilicon emitter and rapid vapor-phase doping base
Very-high-speed silicon bipolar transistors with in-situ doped polysilicon emitter and rapid vapor-phase doping base
406
Uchino, T
5c7413a3-c3f6-41ee-8a74-1614054f63e4
Shiba, T
301a15ec-af81-42e2-9ea3-14d234cf1b22
Kikuchi, T
de4c2c0c-aeb8-4834-9365-7c4d4be25636
Tamaki, Y
4e1d73a1-9605-4e50-b624-041c9bf86dc0
Watanabe, A
76c5b3bf-63ec-4aec-b31f-b54ab9cd2f21
Kiyota, Y
b49d469e-0ab4-4fb7-9870-bc8d93ea0b1a
Uchino, T
5c7413a3-c3f6-41ee-8a74-1614054f63e4
Shiba, T
301a15ec-af81-42e2-9ea3-14d234cf1b22
Kikuchi, T
de4c2c0c-aeb8-4834-9365-7c4d4be25636
Tamaki, Y
4e1d73a1-9605-4e50-b624-041c9bf86dc0
Watanabe, A
76c5b3bf-63ec-4aec-b31f-b54ab9cd2f21
Kiyota, Y
b49d469e-0ab4-4fb7-9870-bc8d93ea0b1a

Uchino, T, Shiba, T, Kikuchi, T, Tamaki, Y, Watanabe, A and Kiyota, Y (1995) Very-high-speed silicon bipolar transistors with in-situ doped polysilicon emitter and rapid vapor-phase doping base. IEEE Trans. Electron Devices, 42, 406.

Record type: Article

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More information

Published date: 1995
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 262155
URI: https://eprints.soton.ac.uk/id/eprint/262155
PURE UUID: 4fc8ee1c-aab4-4a00-abe6-4b52eb48432f

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Date deposited: 27 Mar 2006
Last modified: 18 Jul 2017 08:54

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