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Very-high-speed silicon bipolar transistors with in-situ doped polysilicon emitter and rapid vapor-phase doping base

Record type: Article

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Citation

Uchino, T, Shiba, T, Kikuchi, T, Tamaki, Y, Watanabe, A and Kiyota, Y (1995) Very-high-speed silicon bipolar transistors with in-situ doped polysilicon emitter and rapid vapor-phase doping base IEEE Trans. Electron Devices, 42, p. 406.

More information

Published date: 1995
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 262155
URI: http://eprints.soton.ac.uk/id/eprint/262155
PURE UUID: 4fc8ee1c-aab4-4a00-abe6-4b52eb48432f

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Date deposited: 27 Mar 2006
Last modified: 18 Jul 2017 08:54

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Contributors

Author: T Uchino
Author: T Shiba
Author: T Kikuchi
Author: Y Tamaki
Author: A Watanabe
Author: Y Kiyota

University divisions


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