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Process and device technologies for high speed self-aligned bipolar transistors

Record type: Article

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Citation

Nakamura, T, Shiba, T, Onai, T, Uchino, T, Kiyota, Y, Washio, K and Homma, N (1995) Process and device technologies for high speed self-aligned bipolar transistors IEICE Trans. Electron, E78-C, p. 1154.

More information

Published date: 1995
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 262156
URI: http://eprints.soton.ac.uk/id/eprint/262156
PURE UUID: 6c50bc73-ffe4-42e4-8c6a-9c9b62d52494

Catalogue record

Date deposited: 27 Mar 2006
Last modified: 18 Jul 2017 08:54

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Contributors

Author: T Nakamura
Author: T Shiba
Author: T Onai
Author: T Uchino
Author: Y Kiyota
Author: K Washio
Author: N Homma

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