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A 64-GHz fT and 3.6-V BVceo Si bipolar transistor using in situ phosphorus-doped and large-grained polysilicon emitter contacts

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Citation

Nanba, M, Uchino, T, Kondo, M, Nakamura, T, Kobayashi, T, Tamaki, Y and Tanabe, M (1993) A 64-GHz fT and 3.6-V BVceo Si bipolar transistor using in situ phosphorus-doped and large-grained polysilicon emitter contacts IEEE Trans. Electron Devices, 40, p. 1563.

More information

Published date: 1993
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 262157
URI: http://eprints.soton.ac.uk/id/eprint/262157
PURE UUID: 54c7dfa4-9ca9-444c-a85a-9a1240ca4f92

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Date deposited: 27 Mar 2006
Last modified: 18 Jul 2017 08:54

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Contributors

Author: M Nanba
Author: T Uchino
Author: M Kondo
Author: T Nakamura
Author: T Kobayashi
Author: Y Tamaki
Author: M Tanabe

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