A 64-GHz fT and 3.6-V BVceo Si bipolar transistor using in situ phosphorus-doped and large-grained polysilicon emitter contacts


Nanba, M, Uchino, T, Kondo, M, Nakamura, T, Kobayashi, T, Tamaki, Y and Tanabe, M (1993) A 64-GHz fT and 3.6-V BVceo Si bipolar transistor using in situ phosphorus-doped and large-grained polysilicon emitter contacts IEEE Trans. Electron Devices, 40, p. 1563.

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Item Type: Article
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 262157
Date :
Date Event
1993Published
Date Deposited: 27 Mar 2006
Last Modified: 17 Apr 2017 21:46
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/262157

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