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A 64-GHz fT and 3.6-V BVceo Si bipolar transistor using in situ phosphorus-doped and large-grained polysilicon emitter contacts

A 64-GHz fT and 3.6-V BVceo Si bipolar transistor using in situ phosphorus-doped and large-grained polysilicon emitter contacts
A 64-GHz fT and 3.6-V BVceo Si bipolar transistor using in situ phosphorus-doped and large-grained polysilicon emitter contacts
1563
Nanba, M
195429fe-8f47-49a1-aac9-8c837ea1f3c9
Uchino, T
5c7413a3-c3f6-41ee-8a74-1614054f63e4
Kondo, M
449d0757-0b63-491b-8631-56dd23b6e203
Nakamura, T
7e0c5760-b437-4ca5-b5c6-a344b9ff362e
Kobayashi, T
088803ac-828c-4f7e-8825-7c93ca9e2511
Tamaki, Y
4e1d73a1-9605-4e50-b624-041c9bf86dc0
Tanabe, M
ebb8bba4-41bb-4cc0-a212-ab082bbd021f
Nanba, M
195429fe-8f47-49a1-aac9-8c837ea1f3c9
Uchino, T
5c7413a3-c3f6-41ee-8a74-1614054f63e4
Kondo, M
449d0757-0b63-491b-8631-56dd23b6e203
Nakamura, T
7e0c5760-b437-4ca5-b5c6-a344b9ff362e
Kobayashi, T
088803ac-828c-4f7e-8825-7c93ca9e2511
Tamaki, Y
4e1d73a1-9605-4e50-b624-041c9bf86dc0
Tanabe, M
ebb8bba4-41bb-4cc0-a212-ab082bbd021f

Nanba, M, Uchino, T, Kondo, M, Nakamura, T, Kobayashi, T, Tamaki, Y and Tanabe, M (1993) A 64-GHz fT and 3.6-V BVceo Si bipolar transistor using in situ phosphorus-doped and large-grained polysilicon emitter contacts. IEEE Trans. Electron Devices, 40, 1563.

Record type: Article

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More information

Published date: 1993
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 262157
URI: http://eprints.soton.ac.uk/id/eprint/262157
PURE UUID: 54c7dfa4-9ca9-444c-a85a-9a1240ca4f92

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Date deposited: 27 Mar 2006
Last modified: 18 Jul 2017 08:54

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