Uchino, T, Kiyota, Y and Shiba, T (1999) 0.1-μm CMOS with shallow and steep source/drain extensions fabricated by using rapid vapor-phase doping (RVD). In Proceedings Symposium VLSI Technology Digest, Kyoto. p. 93 .
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Published date: 1999
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 262166
URI: http://eprints.soton.ac.uk/id/eprint/262166
PURE UUID: 9f939108-fc7d-4728-8a10-61318394589e
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Date deposited: 27 Mar 2006
Last modified: 08 Jan 2022 01:29
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Author:
T Uchino
Author:
Y Kiyota
Author:
T Shiba
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