Ohnishi, K, Yamamoto, N, Uchino, T, Hanaoka, Y, Tsuchiya, R, Nonaka, Y, Tanabe, Y, Umezawa, T, Fukuda, N, Mitani, S and Shiba, T (1998) Improving gate oxide integrity (GOI) of a W/WNx/dual-polySi stacked-gate by using wet-hydrogen oxidation in 0.14-um CMOS devices. IEDM Tech. Digest, 397.
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More information
Published date: 1998
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 262168
URI: http://eprints.soton.ac.uk/id/eprint/262168
PURE UUID: ae295cc1-54b0-4ec1-9940-b367582c082d
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Date deposited: 27 Mar 2006
Last modified: 08 Jan 2022 17:42
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Contributors
Author:
K Ohnishi
Author:
N Yamamoto
Author:
T Uchino
Author:
Y Hanaoka
Author:
R Tsuchiya
Author:
Y Nonaka
Author:
Y Tanabe
Author:
T Umezawa
Author:
N Fukuda
Author:
S Mitani
Author:
T Shiba
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