Uchino, T, Shiba, T, Ohnishi, K, Miyauchi, A, Nakata, M, Inoue, Y and Suzuki, T (1997) A raised source/drain technology using in-situ P-doped SiGe and B-doped Si for 0.1-um CMOS ULSIs. IEDM Tech. Digest, 479, 1406.
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Article
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More information
Published date: 1997
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 262169
URI: http://eprints.soton.ac.uk/id/eprint/262169
PURE UUID: b38d2a2c-44ff-4554-a580-0eb830442d59
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Date deposited: 27 Mar 2006
Last modified: 10 Dec 2021 21:25
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Contributors
Author:
T Uchino
Author:
T Shiba
Author:
K Ohnishi
Author:
A Miyauchi
Author:
M Nakata
Author:
Y Inoue
Author:
T Suzuki
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