A raised source/drain technology using in-situ P-doped SiGe and B-doped Si for 0.1-um CMOS ULSIs


Uchino, T, Shiba, T, Ohnishi, K, Miyauchi, A, Nakata, M, Inoue, Y and Suzuki, T (1997) A raised source/drain technology using in-situ P-doped SiGe and B-doped Si for 0.1-um CMOS ULSIs IEDM Tech. Digest, 479, p. 1406.

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Item Type: Article
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 262169
Date :
Date Event
1997Published
Date Deposited: 27 Mar 2006
Last Modified: 17 Apr 2017 21:46
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/262169

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