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A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technology

A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technology
A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technology
443
Nanba, M
195429fe-8f47-49a1-aac9-8c837ea1f3c9
Kobayashi, T
088803ac-828c-4f7e-8825-7c93ca9e2511
Uchino, T
5c7413a3-c3f6-41ee-8a74-1614054f63e4
Nakamura, T
7e0c5760-b437-4ca5-b5c6-a344b9ff362e
Kondo, M
449d0757-0b63-491b-8631-56dd23b6e203
Tamaki, Y
4e1d73a1-9605-4e50-b624-041c9bf86dc0
Iijima, S
f6a42f66-8d5c-44e8-b793-64634f75e604
Kure, T
52560145-52ff-41c5-b1eb-dd3ebf0eb69f
Tanabe, M
ebb8bba4-41bb-4cc0-a212-ab082bbd021f
Nanba, M
195429fe-8f47-49a1-aac9-8c837ea1f3c9
Kobayashi, T
088803ac-828c-4f7e-8825-7c93ca9e2511
Uchino, T
5c7413a3-c3f6-41ee-8a74-1614054f63e4
Nakamura, T
7e0c5760-b437-4ca5-b5c6-a344b9ff362e
Kondo, M
449d0757-0b63-491b-8631-56dd23b6e203
Tamaki, Y
4e1d73a1-9605-4e50-b624-041c9bf86dc0
Iijima, S
f6a42f66-8d5c-44e8-b793-64634f75e604
Kure, T
52560145-52ff-41c5-b1eb-dd3ebf0eb69f
Tanabe, M
ebb8bba4-41bb-4cc0-a212-ab082bbd021f

Nanba, M, Kobayashi, T, Uchino, T, Nakamura, T, Kondo, M, Tamaki, Y, Iijima, S, Kure, T and Tanabe, M (1991) A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technology. IEDM Tech. Digest, 443.

Record type: Article

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More information

Published date: 1991
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 262171
URI: https://eprints.soton.ac.uk/id/eprint/262171
PURE UUID: 4300410a-cf94-4e3e-97e7-e8127a302ff9

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Date deposited: 27 Mar 2006
Last modified: 18 Jul 2017 08:54

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