A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technology


Nanba, M, Kobayashi, T, Uchino, T, Nakamura, T, Kondo, M, Tamaki, Y, Iijima, S, Kure, T and Tanabe, M (1991) A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technology IEDM Tech. Digest, p. 443.

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Item Type: Article
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 262171
Date :
Date Event
1991Published
Date Deposited: 27 Mar 2006
Last Modified: 17 Apr 2017 21:46
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/262171

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