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A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technology

Record type: Article

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Citation

Nanba, M, Kobayashi, T, Uchino, T, Nakamura, T, Kondo, M, Tamaki, Y, Iijima, S, Kure, T and Tanabe, M (1991) A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technology IEDM Tech. Digest, p. 443.

More information

Published date: 1991
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 262171
URI: http://eprints.soton.ac.uk/id/eprint/262171
PURE UUID: 4300410a-cf94-4e3e-97e7-e8127a302ff9

Catalogue record

Date deposited: 27 Mar 2006
Last modified: 18 Jul 2017 08:54

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Contributors

Author: M Nanba
Author: T Kobayashi
Author: T Uchino
Author: T Nakamura
Author: M Kondo
Author: Y Tamaki
Author: S Iijima
Author: T Kure
Author: M Tanabe

University divisions


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