Magnetic properties of lithographically defined lateral Co/Ni80Fe20 wires
Magnetic properties of lithographically defined lateral Co/Ni80Fe20 wires
A novel micro-fabrication technique has been used to create an array of lateral magnetic multilayers consisting of micron-sized sputtered Co and Ni80Fe20 wires. The structures were fabricated using conventional optical lithography and a combination of hard and soft lift-off methods. For the field applied parallel to the wires intrinsic easyaxis, we observed two switching fields corresponding to the distinct coercive field of the Ni80Fe20 wires (Hc1) and Co wires (Hc2)constituting the lateral multilayer wire array. A state of anti-parallel relative alignment of magnetization was observed when the applied field is greater than the switching field of Ni80Fe20 wires but less than the switching field of Co wires. We found the region of anti-parallel alignment of magnetization between the Co and Ni80Fe20 wires to be verysensitive to the relative orientation of the applied magnetic field.
Lateral magnetic tunnel junction, Magnetic wires, Magnetoresistance
355-359
Adeyeye, A. O.
debaea1e-8c7a-4874-9577-b9342c81a640
Husain, M. K.
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Ng, V.
c3c41fdf-5833-4774-aeef-d3b310b525b9
2002
Adeyeye, A. O.
debaea1e-8c7a-4874-9577-b9342c81a640
Husain, M. K.
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Ng, V.
c3c41fdf-5833-4774-aeef-d3b310b525b9
Adeyeye, A. O., Husain, M. K. and Ng, V.
(2002)
Magnetic properties of lithographically defined lateral Co/Ni80Fe20 wires.
Journal of Magnetism and Magnetic Materials, 248, .
Abstract
A novel micro-fabrication technique has been used to create an array of lateral magnetic multilayers consisting of micron-sized sputtered Co and Ni80Fe20 wires. The structures were fabricated using conventional optical lithography and a combination of hard and soft lift-off methods. For the field applied parallel to the wires intrinsic easyaxis, we observed two switching fields corresponding to the distinct coercive field of the Ni80Fe20 wires (Hc1) and Co wires (Hc2)constituting the lateral multilayer wire array. A state of anti-parallel relative alignment of magnetization was observed when the applied field is greater than the switching field of Ni80Fe20 wires but less than the switching field of Co wires. We found the region of anti-parallel alignment of magnetization between the Co and Ni80Fe20 wires to be verysensitive to the relative orientation of the applied magnetic field.
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Published date: 2002
Keywords:
Lateral magnetic tunnel junction, Magnetic wires, Magnetoresistance
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 262381
URI: http://eprints.soton.ac.uk/id/eprint/262381
ISSN: 0304-8853
PURE UUID: fc1b2622-f661-43bb-ac48-c4c0490a7af8
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Date deposited: 20 Apr 2006
Last modified: 14 Mar 2024 07:10
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Contributors
Author:
A. O. Adeyeye
Author:
M. K. Husain
Author:
V. Ng
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