The University of Southampton
University of Southampton Institutional Repository

Semi-insulating silicon by deep level doping for radio frequency applications

Semi-insulating silicon by deep level doping for radio frequency applications
Semi-insulating silicon by deep level doping for radio frequency applications
Deep level Mn doping by ion implantation and RTA have been used for the first time to make very high resistivity Czochralski silicon substrates up to 10 k?cm and on the average, resistivity increased nearly ten-fold. Interesting features, like trapping by end-of-range defects, out-diffusion and partial activation of Mn dopant atoms were observed.
semi-insulating, high resistivity, Czochralski silicon
Mallik, Kanad
013bdafd-6ae0-463e-89a4-6ef1301c5c2f
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Wilshaw, P.R.
d2e7bcf3-ea4b-441a-8395-009e4ac8cb65
Mallik, Kanad
013bdafd-6ae0-463e-89a4-6ef1301c5c2f
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Wilshaw, P.R.
d2e7bcf3-ea4b-441a-8395-009e4ac8cb65

Mallik, Kanad, de Groot, C.H., Ashburn, P. and Wilshaw, P.R. (2006) Semi-insulating silicon by deep level doping for radio frequency applications. 15th Surrey Ion Beam Centre Users' Workshop, Surrey, United Kingdom.

Record type: Conference or Workshop Item (Poster)

Abstract

Deep level Mn doping by ion implantation and RTA have been used for the first time to make very high resistivity Czochralski silicon substrates up to 10 k?cm and on the average, resistivity increased nearly ten-fold. Interesting features, like trapping by end-of-range defects, out-diffusion and partial activation of Mn dopant atoms were observed.

Full text not available from this repository.

More information

Published date: 2006
Additional Information: Event Dates: 05/04/2006
Venue - Dates: 15th Surrey Ion Beam Centre Users' Workshop, Surrey, United Kingdom, 2006-04-04
Keywords: semi-insulating, high resistivity, Czochralski silicon
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 262392
URI: http://eprints.soton.ac.uk/id/eprint/262392
PURE UUID: 55547121-a875-44cc-818f-47878bf2e27c
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 26 Apr 2006
Last modified: 30 Jan 2020 01:31

Export record

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×