Semi-insulating silicon by deep level doping for radio frequency applications
Semi-insulating silicon by deep level doping for radio frequency applications
Deep level Mn doping by ion implantation and RTA have been used for the first time to make very high resistivity Czochralski silicon substrates up to 10 kΩcm and on the average, resistivity increased nearly ten-fold. Interesting features, like trapping by end-of-range defects, out-diffusion and partial activation of Mn dopant atoms were observed.
semi-insulating, high resistivity, Czochralski silicon
Mallik, Kanad
013bdafd-6ae0-463e-89a4-6ef1301c5c2f
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Wilshaw, P.R.
d2e7bcf3-ea4b-441a-8395-009e4ac8cb65
2006
Mallik, Kanad
013bdafd-6ae0-463e-89a4-6ef1301c5c2f
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Wilshaw, P.R.
d2e7bcf3-ea4b-441a-8395-009e4ac8cb65
Mallik, Kanad, de Groot, C.H., Ashburn, P. and Wilshaw, P.R.
(2006)
Semi-insulating silicon by deep level doping for radio frequency applications.
15th Surrey Ion Beam Centre Users' Workshop, Surrey, United Kingdom.
Record type:
Conference or Workshop Item
(Poster)
Abstract
Deep level Mn doping by ion implantation and RTA have been used for the first time to make very high resistivity Czochralski silicon substrates up to 10 kΩcm and on the average, resistivity increased nearly ten-fold. Interesting features, like trapping by end-of-range defects, out-diffusion and partial activation of Mn dopant atoms were observed.
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More information
Published date: 2006
Additional Information:
Event Dates: 05/04/2006
Venue - Dates:
15th Surrey Ion Beam Centre Users' Workshop, Surrey, United Kingdom, 2006-04-04
Keywords:
semi-insulating, high resistivity, Czochralski silicon
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 262392
URI: http://eprints.soton.ac.uk/id/eprint/262392
PURE UUID: 55547121-a875-44cc-818f-47878bf2e27c
Catalogue record
Date deposited: 26 Apr 2006
Last modified: 11 Dec 2021 03:43
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Contributors
Author:
Kanad Mallik
Author:
P.R. Wilshaw
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