MOSFETs with ultrashallow junction and minimum drain area formed by using solid-phase diffusion from SiGe
MOSFETs with ultrashallow junction and minimum drain area formed by using solid-phase diffusion from SiGe
An advanced CMOS structure, in which a raised source/drain and contact windows formed over the field oxide, was fabricated. Ultrashallow junction formation using solid-phase diffusion from doped SiGe layers was used to fabricate MOS-FETs. These MOSFETs demonstrated excellent short-channel characteristics and 70%–80%-reduced parasitic drain-junction capacitance. They have ultrashallow junctions with a depth of 25 nm and a low source/drain extension (SDE) resistance: 350 ?/sq (NMOSFETs) and 390 ?/sq (PMOSFETs). The isotropic diffused SDE structure was formed by using solid-phase diffusion, which could effectively form a shallow junction and a suitable overlap between gate and SDE. This structure results in good short-channel characteristics and high current drivability.
CMOS, raised source/drain, shallow junction, SiGe
1406-1411
Uchino, T
5c7413a3-c3f6-41ee-8a74-1614054f63e4
Miyauchi, A
ddea0d3b-8af5-4168-85fe-85ba5e8578b1
Shiba, T
301a15ec-af81-42e2-9ea3-14d234cf1b22
2001
Uchino, T
5c7413a3-c3f6-41ee-8a74-1614054f63e4
Miyauchi, A
ddea0d3b-8af5-4168-85fe-85ba5e8578b1
Shiba, T
301a15ec-af81-42e2-9ea3-14d234cf1b22
Uchino, T, Miyauchi, A and Shiba, T
(2001)
MOSFETs with ultrashallow junction and minimum drain area formed by using solid-phase diffusion from SiGe.
IEEE Trans. Electron Devices, 48, .
Abstract
An advanced CMOS structure, in which a raised source/drain and contact windows formed over the field oxide, was fabricated. Ultrashallow junction formation using solid-phase diffusion from doped SiGe layers was used to fabricate MOS-FETs. These MOSFETs demonstrated excellent short-channel characteristics and 70%–80%-reduced parasitic drain-junction capacitance. They have ultrashallow junctions with a depth of 25 nm and a low source/drain extension (SDE) resistance: 350 ?/sq (NMOSFETs) and 390 ?/sq (PMOSFETs). The isotropic diffused SDE structure was formed by using solid-phase diffusion, which could effectively form a shallow junction and a suitable overlap between gate and SDE. This structure results in good short-channel characteristics and high current drivability.
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Published date: 2001
Keywords:
CMOS, raised source/drain, shallow junction, SiGe
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 262395
URI: http://eprints.soton.ac.uk/id/eprint/262395
PURE UUID: 273f51b9-c7b7-461f-b060-6e71bfac6755
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Date deposited: 25 Apr 2006
Last modified: 08 Jan 2022 17:42
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Contributors
Author:
T Uchino
Author:
A Miyauchi
Author:
T Shiba
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