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Depletion isolation effect in Vertical MOSFETS during transition from partial to fully depleted operation

Depletion isolation effect in Vertical MOSFETS during transition from partial to fully depleted operation
Depletion isolation effect in Vertical MOSFETS during transition from partial to fully depleted operation
A simulation study is made of floating-body effects (FBEs) in vertical MOSFETs due to depletion isolation as the pillar thickness is reduced from 200 to 10 nm. For pillar thicknesses between 200–60 nm, the output characteristics with and without impact ionization are identical at a low drain bias and then diverge at a high drain bias. The critical drain bias Vdc for which the increased drain–current is observed is found to decrease with a reduction in pillar thickness. This is explained by the onset of FBEs at progressively lower values of the drain bias due to the merging of the drain depletion regions at the bottom of the pillar (depletion isolation). For pillar thicknesses between 60–10 nm, the output characteristics show the opposite behavior, namely, the critical drain bias increases with a reduction in pillar thickness. This is explained by a reduction in the severity of the FBEs due to the drain debiasing effect caused by the elevated body potential. Both depletion isolation and gate–gate coupling contribute to the drain–current for pillar thicknesses between 100–40 nm.
Depletion isolation, fully depleted (FD), partially depleted (PD), vertical MOSFETs (VMOS)
929-933
Hakim, M.M.A.
e584d902-b647-49eb-85bf-15446c06652a
de Groot, C. H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Gili, E.
6e227036-b8f4-4364-a0ce-28c3899294b8
Uchino, T.
706196b8-2f2c-403d-97aa-2995eac8572b
Hall, S.
a11a8f8b-d6fb-47a7-82b1-1f76d2f170dc
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Hakim, M.M.A.
e584d902-b647-49eb-85bf-15446c06652a
de Groot, C. H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Gili, E.
6e227036-b8f4-4364-a0ce-28c3899294b8
Uchino, T.
706196b8-2f2c-403d-97aa-2995eac8572b
Hall, S.
a11a8f8b-d6fb-47a7-82b1-1f76d2f170dc
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Hakim, M.M.A., de Groot, C. H., Gili, E., Uchino, T., Hall, S. and Ashburn, P. (2006) Depletion isolation effect in Vertical MOSFETS during transition from partial to fully depleted operation. IEEE Transaction on Electron Devices, 53 (4), 929-933.

Record type: Article

Abstract

A simulation study is made of floating-body effects (FBEs) in vertical MOSFETs due to depletion isolation as the pillar thickness is reduced from 200 to 10 nm. For pillar thicknesses between 200–60 nm, the output characteristics with and without impact ionization are identical at a low drain bias and then diverge at a high drain bias. The critical drain bias Vdc for which the increased drain–current is observed is found to decrease with a reduction in pillar thickness. This is explained by the onset of FBEs at progressively lower values of the drain bias due to the merging of the drain depletion regions at the bottom of the pillar (depletion isolation). For pillar thicknesses between 60–10 nm, the output characteristics show the opposite behavior, namely, the critical drain bias increases with a reduction in pillar thickness. This is explained by a reduction in the severity of the FBEs due to the drain debiasing effect caused by the elevated body potential. Both depletion isolation and gate–gate coupling contribute to the drain–current for pillar thicknesses between 100–40 nm.

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Published date: 2006
Keywords: Depletion isolation, fully depleted (FD), partially depleted (PD), vertical MOSFETs (VMOS)
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 262449
URI: http://eprints.soton.ac.uk/id/eprint/262449
PURE UUID: ec4e5f46-0823-4d15-85e5-6ccedd7cfef7
ORCID for C. H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 02 May 2006
Last modified: 24 Sep 2020 01:35

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