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A Physically Based Compact Model of Partially Depleted MOSFETs for Analog Circuit Stimulation

A Physically Based Compact Model of Partially Depleted MOSFETs for Analog Circuit Stimulation
A Physically Based Compact Model of Partially Depleted MOSFETs for Analog Circuit Stimulation
In this paper, the Southampton Thermal Analogue (STAG) compact model for partially depleted (PD) silicon-on-insulator (SOI) MOSFETs is presented. The model uses a single expression to model the channel current, thereby ensuring continuous transition between all operating regions. Furthermore, care has been taken to ensure that this expression is also infinitely differentiable, resulting in smooth and continuous conductances and capacitances as well as higher order derivatives. Floating-body effects, which are particular to PD SOI and which are of concern to analog circuit designers in this technology, are well modeled. Small geometry effects such as channel length modulation (CLM), drain-induced barrier lowering (DIBL), charge sharing, and high field mobility effects have also been included. Self-heating (SH) effects are much more apparent in SOI devices than in equivalent bulk devices. These have been modeled in a consistent manner, and the implementation in SPICE3f5 gives the user an additional thermal node which allows internal device temperature rises to be monitored and also accommodates the modeling of coupled heating between separate devices. The model has been successfully used to simulate a variety of circuits which commonly cause problems with convergence. Due to its inherent robustness, the model can normally achieve convergence without recourse to the setting of initial nodal voltage estimates.
0018-9200
110-121
Lee, M. S. L.
6460a2db-498f-49de-b52e-9c134b9cf54d
Tenbroek, B. M.
321ed915-008d-4218-9564-57e061886804
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf
Benson, J.
594e14de-a2a3-4e8e-9f74-947c50735671
Uren, M. J.
98cd13fc-b6fa-4126-8ef3-f5fc8be04710
Lee, M. S. L.
6460a2db-498f-49de-b52e-9c134b9cf54d
Tenbroek, B. M.
321ed915-008d-4218-9564-57e061886804
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf
Benson, J.
594e14de-a2a3-4e8e-9f74-947c50735671
Uren, M. J.
98cd13fc-b6fa-4126-8ef3-f5fc8be04710

Lee, M. S. L., Tenbroek, B. M., Redman-White, W., Benson, J. and Uren, M. J. (2001) A Physically Based Compact Model of Partially Depleted MOSFETs for Analog Circuit Stimulation. IEEE Journal of Solid State Circuits, 36 (1), 110-121.

Record type: Article

Abstract

In this paper, the Southampton Thermal Analogue (STAG) compact model for partially depleted (PD) silicon-on-insulator (SOI) MOSFETs is presented. The model uses a single expression to model the channel current, thereby ensuring continuous transition between all operating regions. Furthermore, care has been taken to ensure that this expression is also infinitely differentiable, resulting in smooth and continuous conductances and capacitances as well as higher order derivatives. Floating-body effects, which are particular to PD SOI and which are of concern to analog circuit designers in this technology, are well modeled. Small geometry effects such as channel length modulation (CLM), drain-induced barrier lowering (DIBL), charge sharing, and high field mobility effects have also been included. Self-heating (SH) effects are much more apparent in SOI devices than in equivalent bulk devices. These have been modeled in a consistent manner, and the implementation in SPICE3f5 gives the user an additional thermal node which allows internal device temperature rises to be monitored and also accommodates the modeling of coupled heating between separate devices. The model has been successfully used to simulate a variety of circuits which commonly cause problems with convergence. Due to its inherent robustness, the model can normally achieve convergence without recourse to the setting of initial nodal voltage estimates.

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More information

Published date: January 2001
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 262487
URI: https://eprints.soton.ac.uk/id/eprint/262487
ISSN: 0018-9200
PURE UUID: e8db9aad-f00f-4f6d-8beb-c8da8b6469f3

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Date deposited: 04 May 2006
Last modified: 18 Jul 2017 08:50

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