The University of Southampton
University of Southampton Institutional Repository

Self-assembled germanium islands grown on (001) silicon substrates by low-pressure chemical vapor deposition

Self-assembled germanium islands grown on (001) silicon substrates by low-pressure chemical vapor deposition
Self-assembled germanium islands grown on (001) silicon substrates by low-pressure chemical vapor deposition
The time evolution of self-assembled Ge islands, during low-pressure chemical vapor deposition (LPCVD)of Ge on Si at 650 Deg C using high growth rates, has been investigated by atomic force microscopy,transmission electron microscopy, and Rutherford backscattering spectrometry. We have found three different island structures The smallest islands are "lens-shaped" and characterized by a rather narrow size distribution, ~4nm high and ~20nm wide. Next to form are a distinct population of multifaceted "dome shaped" islands, up to 25nm high and 80-150 nm wide. Finally, the largest islands that form are square-based truncated pyramids with a very narrow size distribution ~50nm high and ~250nm wide. The pyramidal islands normally seen in the intermediate size range (~150nm) are not observed. The small lens-shaped islands appear to be defect free, while some of the multifaceted islands as well as all the large truncated pyramids contain misfit dislocations. The existence of multifaceted ialands, in the size range where multifaceted "dome shaped" islands have previously been reported, is attributed to the high growth rate used. Furthermore, under the growth conditions used, the truncated-pyramid-shaped islands are characterized by a very narrow size distribution.
323-327
Dilliway, G D M
d9dc0573-ab53-4013-b0ef-7d1928a164d2
Bagnall, D M
5d84abc8-77e5-43f7-97cb-e28533f25ef1
Cowern, N E B
40d23c5f-9d5d-438a-ba63-482c53a5c33a
Jeynes, C
838ab9ab-998e-4eb0-ab12-89fc97df3caf
Dilliway, G D M
d9dc0573-ab53-4013-b0ef-7d1928a164d2
Bagnall, D M
5d84abc8-77e5-43f7-97cb-e28533f25ef1
Cowern, N E B
40d23c5f-9d5d-438a-ba63-482c53a5c33a
Jeynes, C
838ab9ab-998e-4eb0-ab12-89fc97df3caf

Dilliway, G D M, Bagnall, D M, Cowern, N E B and Jeynes, C (2003) Self-assembled germanium islands grown on (001) silicon substrates by low-pressure chemical vapor deposition. Journal of Materials Science: Materials in Electronics, 14, 323-327.

Record type: Article

Abstract

The time evolution of self-assembled Ge islands, during low-pressure chemical vapor deposition (LPCVD)of Ge on Si at 650 Deg C using high growth rates, has been investigated by atomic force microscopy,transmission electron microscopy, and Rutherford backscattering spectrometry. We have found three different island structures The smallest islands are "lens-shaped" and characterized by a rather narrow size distribution, ~4nm high and ~20nm wide. Next to form are a distinct population of multifaceted "dome shaped" islands, up to 25nm high and 80-150 nm wide. Finally, the largest islands that form are square-based truncated pyramids with a very narrow size distribution ~50nm high and ~250nm wide. The pyramidal islands normally seen in the intermediate size range (~150nm) are not observed. The small lens-shaped islands appear to be defect free, while some of the multifaceted islands as well as all the large truncated pyramids contain misfit dislocations. The existence of multifaceted ialands, in the size range where multifaceted "dome shaped" islands have previously been reported, is attributed to the high growth rate used. Furthermore, under the growth conditions used, the truncated-pyramid-shaped islands are characterized by a very narrow size distribution.

Text
jms2.pdf - Other
Download (949kB)

More information

Published date: December 2003
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 262674
URI: https://eprints.soton.ac.uk/id/eprint/262674
PURE UUID: f83ff996-afba-4b30-b468-9cb0dbcceb1d

Catalogue record

Date deposited: 06 Jun 2006
Last modified: 23 Nov 2017 17:33

Export record

Contributors

Author: G D M Dilliway
Author: D M Bagnall
Author: N E B Cowern
Author: C Jeynes

University divisions

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of https://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×