Schottky diode back contacts for high frequency capacitance studies on semiconductors
Schottky diode back contacts for high frequency capacitance studies on semiconductors
A technique using large area Schottky diode back contacts has been developed to enable high frequency capacitance studies to be carried out on semiconductors without the need to fabricate high quality ohmic back contacts. This technique will find application for very high resistivity materials or for the characterization of novel semiconductors when a method of producing good ohmic contacts has not been established. In this method a back contact much larger in area than the front contact diode under test is used. It is then found that accurate capacitance-voltage measurements can be made of the ionized doping density and, provided the back contact has sufficient leakage, the built-in potential can also be measured. Such specimens may also be used for characterization using the deep level transient spectroscopy (DLTS) technique and this is demonstrated by obtaining DLTS spectra from very high resistivity silicon specimens containing oxygen precipitates and comparing these to similar spectra obtained from more highly doped material.
Schottky diode, back contact, capacitance-voltage, DLTS, high resistivity, silicon
231-238
Mallik, Kanad
013bdafd-6ae0-463e-89a4-6ef1301c5c2f
Falster, R.J.
1cfe39bf-c877-431a-b99f-0e9d5622bc07
Wilshaw, P.R.
d2e7bcf3-ea4b-441a-8395-009e4ac8cb65
February 2004
Mallik, Kanad
013bdafd-6ae0-463e-89a4-6ef1301c5c2f
Falster, R.J.
1cfe39bf-c877-431a-b99f-0e9d5622bc07
Wilshaw, P.R.
d2e7bcf3-ea4b-441a-8395-009e4ac8cb65
Mallik, Kanad, Falster, R.J. and Wilshaw, P.R.
(2004)
Schottky diode back contacts for high frequency capacitance studies on semiconductors.
Solid-State Electronics, 48, .
Abstract
A technique using large area Schottky diode back contacts has been developed to enable high frequency capacitance studies to be carried out on semiconductors without the need to fabricate high quality ohmic back contacts. This technique will find application for very high resistivity materials or for the characterization of novel semiconductors when a method of producing good ohmic contacts has not been established. In this method a back contact much larger in area than the front contact diode under test is used. It is then found that accurate capacitance-voltage measurements can be made of the ionized doping density and, provided the back contact has sufficient leakage, the built-in potential can also be measured. Such specimens may also be used for characterization using the deep level transient spectroscopy (DLTS) technique and this is demonstrated by obtaining DLTS spectra from very high resistivity silicon specimens containing oxygen precipitates and comparing these to similar spectra obtained from more highly doped material.
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Published date: February 2004
Additional Information:
PACS Nos. 73.30.+y, 84.37.+q, 85.30.De, 71.55.-i
Keywords:
Schottky diode, back contact, capacitance-voltage, DLTS, high resistivity, silicon
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 262676
URI: http://eprints.soton.ac.uk/id/eprint/262676
PURE UUID: 6d5dfd78-8de0-42e1-aaf8-f11c310d6083
Catalogue record
Date deposited: 06 Jun 2006
Last modified: 14 Mar 2024 07:16
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Contributors
Author:
Kanad Mallik
Author:
R.J. Falster
Author:
P.R. Wilshaw
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