Schottky diode back contacts for high frequency capacitance studies on semiconductors


Mallik, Kanad, Falster, R.J. and Wilshaw, P.R. (2004) Schottky diode back contacts for high frequency capacitance studies on semiconductors Solid-State Electronics, 48, pp. 231-238.

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Description/Abstract

A technique using large area Schottky diode back contacts has been developed to enable high frequency capacitance studies to be carried out on semiconductors without the need to fabricate high quality ohmic back contacts. This technique will find application for very high resistivity materials or for the characterization of novel semiconductors when a method of producing good ohmic contacts has not been established. In this method a back contact much larger in area than the front contact diode under test is used. It is then found that accurate capacitance-voltage measurements can be made of the ionized doping density and, provided the back contact has sufficient leakage, the built-in potential can also be measured. Such specimens may also be used for characterization using the deep level transient spectroscopy (DLTS) technique and this is demonstrated by obtaining DLTS spectra from very high resistivity silicon specimens containing oxygen precipitates and comparing these to similar spectra obtained from more highly doped material.

Item Type: Article
Additional Information: PACS Nos. 73.30.+y, 84.37.+q, 85.30.De, 71.55.-i
Keywords: Schottky diode, back contact, capacitance-voltage, DLTS, high resistivity, silicon
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 262676
Date :
Date Event
February 2004Published
Date Deposited: 06 Jun 2006
Last Modified: 17 Apr 2017 21:38
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/262676

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