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Near-band gap luminescence at room temperature from dislocations in silicon

Near-band gap luminescence at room temperature from dislocations in silicon
Near-band gap luminescence at room temperature from dislocations in silicon
Cathodoluminescence (CL) has been used to investigate room-temperature light emission from dislocations generated by ion-implantation. Czochralski silicon wafers were implanted with boron and silicon ions at a range of doses and energies to produce, after suitable thermal annealing, a band of dislocation loops typically ~150 nm from the surface. Room-temperature CL from specimens with a range of dislocation densities was observed with a peak wavelength of 1154 nm. The luminescence was found to be independent of the presence of a p–n junction and the luminescence efficiency was lower for the relatively lowly doped silicon implanted samples than in the case of the highly doped boron implanted samples. We attribute the luminescence behaviour to electron–hole recombination at the dislocations themselves and propose a model for this near-band gap luminescence based on one-dimensional energy bands previously associated with the strain field of dislocations.
Silicon, Ion implantation, Dislocation, Luminescence
710-713
Stowe, D.J.
e5e00726-b345-4ad8-99c3-fec7af427b3a
Galloway, S.A.
a638f876-e59d-4b99-bd58-d09b2c0ea914
Senkader, S.
3c03e09e-0970-4187-b95b-ae171ea081c0
Mallik, Kanad
013bdafd-6ae0-463e-89a4-6ef1301c5c2f
Falster, R.J.
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Wilshaw, P.R.
d2e7bcf3-ea4b-441a-8395-009e4ac8cb65
Stowe, D.J.
e5e00726-b345-4ad8-99c3-fec7af427b3a
Galloway, S.A.
a638f876-e59d-4b99-bd58-d09b2c0ea914
Senkader, S.
3c03e09e-0970-4187-b95b-ae171ea081c0
Mallik, Kanad
013bdafd-6ae0-463e-89a4-6ef1301c5c2f
Falster, R.J.
1cfe39bf-c877-431a-b99f-0e9d5622bc07
Wilshaw, P.R.
d2e7bcf3-ea4b-441a-8395-009e4ac8cb65

Stowe, D.J., Galloway, S.A., Senkader, S., Mallik, Kanad, Falster, R.J. and Wilshaw, P.R. (2003) Near-band gap luminescence at room temperature from dislocations in silicon. Physica B: Condensed Matter, 340-34, 710-713.

Record type: Article

Abstract

Cathodoluminescence (CL) has been used to investigate room-temperature light emission from dislocations generated by ion-implantation. Czochralski silicon wafers were implanted with boron and silicon ions at a range of doses and energies to produce, after suitable thermal annealing, a band of dislocation loops typically ~150 nm from the surface. Room-temperature CL from specimens with a range of dislocation densities was observed with a peak wavelength of 1154 nm. The luminescence was found to be independent of the presence of a p–n junction and the luminescence efficiency was lower for the relatively lowly doped silicon implanted samples than in the case of the highly doped boron implanted samples. We attribute the luminescence behaviour to electron–hole recombination at the dislocations themselves and propose a model for this near-band gap luminescence based on one-dimensional energy bands previously associated with the strain field of dislocations.

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Published date: December 2003
Keywords: Silicon, Ion implantation, Dislocation, Luminescence
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 262677
URI: http://eprints.soton.ac.uk/id/eprint/262677
PURE UUID: a1e6d157-58c8-41db-8477-48f08a4b09cd

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Date deposited: 06 Jun 2006
Last modified: 02 Dec 2019 21:06

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