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Properties and benefits of fluorine in Si and SiGe devices

Properties and benefits of fluorine in Si and SiGe devices
Properties and benefits of fluorine in Si and SiGe devices
This paper reviews the behaviour of fluorine in silicon and silicon-germanium devices. Fluorine is shown to have many beneficial effects in polysilicon emitter bipolar transistors, including higher values of gain, lower emitter resistance, lower 1/f noise and more ideal base characteristics. These results are explained by passivation of trapping states at the polysilicon/silicon interface and accelerated break-up of the interfacial oxide layer. Fluorine is also shown to be extremely effective at suppressing the diffusion of boron, completely suppressing boron transient enhanced diffusion and significantly reducing boron thermal diffusion. The boron thermal diffusion suppression correlates with the appearance of a fluorine peak on the SIMS profile at approximately half the projected range of the fluorine implant, which is attributed to vacancy-fluorine clusters. When applied to bipolar technology, fluorine implantation leads to a record fT of 110GHz in a silicon bipolar transistor.
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
El Mubarek, H.A.W.
08195505-5e00-40a6-bc9f-ebbf2a2fbf63
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
El Mubarek, H.A.W.
08195505-5e00-40a6-bc9f-ebbf2a2fbf63

Ashburn, P. and El Mubarek, H.A.W. (2006) Properties and benefits of fluorine in Si and SiGe devices. 7th Diagnostics and Yield Symposium, Warsaw, Poland. 25 - 27 Jun 2006.

Record type: Conference or Workshop Item (Other)

Abstract

This paper reviews the behaviour of fluorine in silicon and silicon-germanium devices. Fluorine is shown to have many beneficial effects in polysilicon emitter bipolar transistors, including higher values of gain, lower emitter resistance, lower 1/f noise and more ideal base characteristics. These results are explained by passivation of trapping states at the polysilicon/silicon interface and accelerated break-up of the interfacial oxide layer. Fluorine is also shown to be extremely effective at suppressing the diffusion of boron, completely suppressing boron transient enhanced diffusion and significantly reducing boron thermal diffusion. The boron thermal diffusion suppression correlates with the appearance of a fluorine peak on the SIMS profile at approximately half the projected range of the fluorine implant, which is attributed to vacancy-fluorine clusters. When applied to bipolar technology, fluorine implantation leads to a record fT of 110GHz in a silicon bipolar transistor.

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More information

Published date: 2006
Additional Information: Event Dates: 26th - 28th June
Venue - Dates: 7th Diagnostics and Yield Symposium, Warsaw, Poland, 2006-06-25 - 2006-06-27
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 262706
URI: http://eprints.soton.ac.uk/id/eprint/262706
PURE UUID: a600cd14-e219-471d-b112-3b95be5e09fe

Catalogue record

Date deposited: 14 Jun 2006
Last modified: 29 Jan 2020 15:50

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