Lateral crystallization of amorphous silicon by germanium seeding
Lateral crystallization of amorphous silicon by germanium seeding
This paper investigates the time and temperature dependence of amorphous silicon lateral crystallization when polycrystalline germanium is used as a seed. Dramatically different crystallization behaviour is observed for heavy and light crystallization anneals. For a heavy anneal of 40 hours at 550?C increased crystallization of the amorphous silicon is seen in all areas beneath the germanium seed compared with areas without any germanium, as has been reported previously. In contrast for light anneals at 500°C crystallization of the amorphous silicon only occurs around the perimeter of the germanium seed. The perimeter lateral crystallization is reasonably uniform, reaching a distance of 500 nm after a 60 hour anneal at 500?C. Transmission electron microscopy (TEM) shows that the crystallized material is polycrystalline and made up of grains with various orientations. This different behaviour for short and long anneal times suggests that two different mechanisms are taking place; we speculate that the perimeter crystallization is due to stress.
2437-2440
Hakim, M.M.A.
e584d902-b647-49eb-85bf-15446c06652a
Matko, I.
48699871-8460-427a-a5da-be37b3be236d
Chenevier, B.
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Ashburn, P.
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November 2006
Hakim, M.M.A.
e584d902-b647-49eb-85bf-15446c06652a
Matko, I.
48699871-8460-427a-a5da-be37b3be236d
Chenevier, B.
c5fb051a-a743-4fc8-b8bc-bbb4e74ba4d1
Ashburn, P.
b83e6f67-41ee-449d-bfe2-554198713f23
Hakim, M.M.A., Matko, I., Chenevier, B. and Ashburn, P.
(2006)
Lateral crystallization of amorphous silicon by germanium seeding.
Microelectronic Engineering, 83 (11), .
Abstract
This paper investigates the time and temperature dependence of amorphous silicon lateral crystallization when polycrystalline germanium is used as a seed. Dramatically different crystallization behaviour is observed for heavy and light crystallization anneals. For a heavy anneal of 40 hours at 550?C increased crystallization of the amorphous silicon is seen in all areas beneath the germanium seed compared with areas without any germanium, as has been reported previously. In contrast for light anneals at 500°C crystallization of the amorphous silicon only occurs around the perimeter of the germanium seed. The perimeter lateral crystallization is reasonably uniform, reaching a distance of 500 nm after a 60 hour anneal at 500?C. Transmission electron microscopy (TEM) shows that the crystallized material is polycrystalline and made up of grains with various orientations. This different behaviour for short and long anneal times suggests that two different mechanisms are taking place; we speculate that the perimeter crystallization is due to stress.
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Published date: November 2006
Additional Information:
Event Dates: 6-8 March 2006
Venue - Dates:
Materials for Advanced Metallization, Grenoble., France, 2006-01-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 262740
URI: http://eprints.soton.ac.uk/id/eprint/262740
ISSN: 0167-9317
PURE UUID: 09bde56c-c52c-4a46-8d59-057320f6a3d5
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Date deposited: 22 Jun 2006
Last modified: 15 Mar 2024 23:14
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Contributors
Author:
M.M.A. Hakim
Author:
I. Matko
Author:
B. Chenevier
Author:
P. Ashburn
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