Perimeter crystallization of amorphous silicon around a germanium seed
Perimeter crystallization of amorphous silicon around a germanium seed
An a-Si crystallization phenomenon that originates from the perimeter of a germanium seed during anneal at 500°C is reported. The perimeter crystallization is reasonably uniform and reaches 500 nm after a 60 h anneal at 500°C. Transmission electron microscopy shows that the crystallized material is polycrystalline and made up of grains with various orientations. In contrast, a 60 h anneal at 550°C gives increased a-Si crystallization beneath the entire germanium seed, as reported previously. This perimeter crystallization phenomenon is advantageous because it allows a-Si crystallization to be achieved at a lower thermal budget.
G236-G238
Hakim, M. M. A
6192d22f-fb98-4a04-8b9f-5d9a5abb0d4f
Matko, I.
48699871-8460-427a-a5da-be37b3be236d
Chenevier, B.
c5fb051a-a743-4fc8-b8bc-bbb4e74ba4d1
Ashburn, P.
b83e6f67-41ee-449d-bfe2-554198713f23
July 2006
Hakim, M. M. A
6192d22f-fb98-4a04-8b9f-5d9a5abb0d4f
Matko, I.
48699871-8460-427a-a5da-be37b3be236d
Chenevier, B.
c5fb051a-a743-4fc8-b8bc-bbb4e74ba4d1
Ashburn, P.
b83e6f67-41ee-449d-bfe2-554198713f23
Hakim, M. M. A, Matko, I., Chenevier, B. and Ashburn, P.
(2006)
Perimeter crystallization of amorphous silicon around a germanium seed.
Electrochemical and Solid-State Letters, 9 (7), .
Abstract
An a-Si crystallization phenomenon that originates from the perimeter of a germanium seed during anneal at 500°C is reported. The perimeter crystallization is reasonably uniform and reaches 500 nm after a 60 h anneal at 500°C. Transmission electron microscopy shows that the crystallized material is polycrystalline and made up of grains with various orientations. In contrast, a 60 h anneal at 550°C gives increased a-Si crystallization beneath the entire germanium seed, as reported previously. This perimeter crystallization phenomenon is advantageous because it allows a-Si crystallization to be achieved at a lower thermal budget.
Text
2006HakimPerimeterCrystallization.pdf
- Other
Text
2006HakimPerimeterCrystallization.pdf
- Other
Restricted to Registered users only
More information
Published date: July 2006
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 262742
URI: http://eprints.soton.ac.uk/id/eprint/262742
PURE UUID: 67e59dac-e165-4075-9894-18a9ddcf5b0a
Catalogue record
Date deposited: 22 Jun 2006
Last modified: 14 Mar 2024 07:17
Export record
Contributors
Author:
M. M. A Hakim
Author:
I. Matko
Author:
B. Chenevier
Author:
P. Ashburn
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics