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Space Charge Modelling in Solid Dielectrics under High Electric Field Based on Double Charge Injection Model

Space Charge Modelling in Solid Dielectrics under High Electric Field Based on Double Charge Injection Model
Space Charge Modelling in Solid Dielectrics under High Electric Field Based on Double Charge Injection Model
Present study aims to develop a clear insight on factors that influence space charge dynamics in solid dielectrics through a numerical simulation. The model used for the simulation is proposed by Alison and Hill [1] which describes charge dynamics as a result of bipolar transport with single level trapping. In this model, a constant mobility and no detrapping have been assumed. The simulation results show that carrier mobility, trapping coefficient and Schottky barrier have a significant effect on the space charge dynamics. Many features of space charge profiles observed by experiments have been revealed in despite of over simplistic model. More importantly, the simulation allows us to study the role of each individual parameter in the formation of space charge in solid dielectrics, so that the experimental results can be better understood.
Chen, G
3de45a9c-6c9a-4bcb-90c3-d7e26be21819
Loi, S H
b795839d-4f02-4c3c-b874-25a4a8145812
Chen, G
3de45a9c-6c9a-4bcb-90c3-d7e26be21819
Loi, S H
b795839d-4f02-4c3c-b874-25a4a8145812

Chen, G and Loi, S H (2005) Space Charge Modelling in Solid Dielectrics under High Electric Field Based on Double Charge Injection Model. MRS Fall Meeting, Boston, United States. 28 Nov - 02 Dec 2006.

Record type: Conference or Workshop Item (Paper)

Abstract

Present study aims to develop a clear insight on factors that influence space charge dynamics in solid dielectrics through a numerical simulation. The model used for the simulation is proposed by Alison and Hill [1] which describes charge dynamics as a result of bipolar transport with single level trapping. In this model, a constant mobility and no detrapping have been assumed. The simulation results show that carrier mobility, trapping coefficient and Schottky barrier have a significant effect on the space charge dynamics. Many features of space charge profiles observed by experiments have been revealed in despite of over simplistic model. More importantly, the simulation allows us to study the role of each individual parameter in the formation of space charge in solid dielectrics, so that the experimental results can be better understood.

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More information

Published date: 2005
Additional Information: Event Dates: 28 Nov. - 2 Dec., 2006
Venue - Dates: MRS Fall Meeting, Boston, United States, 2006-11-28 - 2006-12-02
Organisations: Electronics & Computer Science, EEE

Identifiers

Local EPrints ID: 262749
URI: http://eprints.soton.ac.uk/id/eprint/262749
PURE UUID: 78b61087-8041-4268-a7f2-123d20e577b5

Catalogue record

Date deposited: 23 Jun 2006
Last modified: 14 Mar 2024 07:17

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Contributors

Author: G Chen
Author: S H Loi

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