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Space Charge Modelling in Solid Dielectrics under High Electric Field Based on Double Charge Injection Model

Chen, G and Loi, S H (2005) Space Charge Modelling in Solid Dielectrics under High Electric Field Based on Double Charge Injection Model At MRS Fall Meeting, United States. 28 Nov - 02 Dec 2006.

Record type: Conference or Workshop Item (Paper)


Present study aims to develop a clear insight on factors that influence space charge dynamics in solid dielectrics through a numerical simulation. The model used for the simulation is proposed by Alison and Hill [1] which describes charge dynamics as a result of bipolar transport with single level trapping. In this model, a constant mobility and no detrapping have been assumed. The simulation results show that carrier mobility, trapping coefficient and Schottky barrier have a significant effect on the space charge dynamics. Many features of space charge profiles observed by experiments have been revealed in despite of over simplistic model. More importantly, the simulation allows us to study the role of each individual parameter in the formation of space charge in solid dielectrics, so that the experimental results can be better understood.

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Published date: 2005
Additional Information: Event Dates: 28 Nov. - 2 Dec., 2006
Venue - Dates: MRS Fall Meeting, United States, 2006-11-28 - 2006-12-02
Organisations: Electronics & Computer Science, EEE


Local EPrints ID: 262749
PURE UUID: 78b61087-8041-4268-a7f2-123d20e577b5

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Date deposited: 23 Jun 2006
Last modified: 18 Jul 2017 08:48

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Author: G Chen
Author: S H Loi

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