Leakage Read Fault in Nanoscale SRAM: Analysis, Test and Diagnosis
Leakage Read Fault in Nanoscale SRAM: Analysis, Test and Diagnosis
In this paper we study the impact of leakage currents on the operation of SRAM memories fabricated using nanoscale technologies. We show how the leakage currents, flowing through the pass transistors of unselected cells, may affect the read operation causing Leakage Read Faults (LRFs). The results of extensive Spice simulation on a 65nm SRAM are analyzed to evaluate the occurrence of the LRF for different operating conditions including supply voltage, temperature and frequency. Furthermore, the test requirements to cover LRFs are given and a low complexity (?2N) March test is proposed for diagnostic purposes.
SRAM, Leakage Currents, Read operation, March test
Dilillo, Luigi
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Hashimi, B. M.
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Rosinger, Paul
b4dae52c-aeb6-4e07-8a63-d6deaae76ef2
Girard, Patrick
bc273198-410b-4891-a1a0-063d21b6f4a9
2006
Dilillo, Luigi
ce7b08ab-24fa-4099-8403-8b2cc54eb235
Hashimi, B. M.
0b29c671-a6d2-459c-af68-c4614dce3b5d
Rosinger, Paul
b4dae52c-aeb6-4e07-8a63-d6deaae76ef2
Girard, Patrick
bc273198-410b-4891-a1a0-063d21b6f4a9
Dilillo, Luigi, Hashimi, B. M., Rosinger, Paul and Girard, Patrick
(2006)
Leakage Read Fault in Nanoscale SRAM: Analysis, Test and Diagnosis.
International Design and Test Workshop, Duday.
19 - 20 Nov 2006.
Record type:
Conference or Workshop Item
(Other)
Abstract
In this paper we study the impact of leakage currents on the operation of SRAM memories fabricated using nanoscale technologies. We show how the leakage currents, flowing through the pass transistors of unselected cells, may affect the read operation causing Leakage Read Faults (LRFs). The results of extensive Spice simulation on a 65nm SRAM are analyzed to evaluate the occurrence of the LRF for different operating conditions including supply voltage, temperature and frequency. Furthermore, the test requirements to cover LRFs are given and a low complexity (?2N) March test is proposed for diagnostic purposes.
More information
Published date: 2006
Additional Information:
Event Dates: 19-20 November 2006
Venue - Dates:
International Design and Test Workshop, Duday, 2006-11-19 - 2006-11-20
Keywords:
SRAM, Leakage Currents, Read operation, March test
Organisations:
Electronic & Software Systems
Identifiers
Local EPrints ID: 263219
URI: http://eprints.soton.ac.uk/id/eprint/263219
PURE UUID: 3b1d8516-c0af-4884-85ce-bacb747e371e
Catalogue record
Date deposited: 30 Nov 2006
Last modified: 14 Mar 2024 07:27
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Contributors
Author:
Luigi Dilillo
Author:
B. M. Hashimi
Author:
Paul Rosinger
Author:
Patrick Girard
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