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Semi insulating Czochralski silicon for radio frequency applications

Semi insulating Czochralski silicon for radio frequency applications
Semi insulating Czochralski silicon for radio frequency applications
Deep level manganese (Mn) doping has been used to fabricate very high resistivity single crystal silicon substrates grown by the Czochralski method. The Mn has been introduced by ion implantation with a dose of 1014 cm−2 of Mn at 100 keV followed by rapid thermal annealing at 800 °C for 36 s. The resistivity of the wafer is enhanced from 600 Ωcm for the undoped substrate to a maximum of 10 kΩcm for the Mn-doped substrate. The experimental data are corroborated using a theoretical model for doping compensation due to deep level impurities. This level of obtained resistivity is suitable for making silicon on-chip integration of radio frequency devices.
0003-6951
112122
Mallik, K.
c9c1ba23-0c13-4f61-b0c5-de3120d878f9
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Wilshaw, P.R.
d2e7bcf3-ea4b-441a-8395-009e4ac8cb65
Mallik, K.
c9c1ba23-0c13-4f61-b0c5-de3120d878f9
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Wilshaw, P.R.
d2e7bcf3-ea4b-441a-8395-009e4ac8cb65

Mallik, K., de Groot, C.H., Ashburn, P. and Wilshaw, P.R. (2006) Semi insulating Czochralski silicon for radio frequency applications. Applied Physics Letters, 89, 112122.

Record type: Article

Abstract

Deep level manganese (Mn) doping has been used to fabricate very high resistivity single crystal silicon substrates grown by the Czochralski method. The Mn has been introduced by ion implantation with a dose of 1014 cm−2 of Mn at 100 keV followed by rapid thermal annealing at 800 °C for 36 s. The resistivity of the wafer is enhanced from 600 Ωcm for the undoped substrate to a maximum of 10 kΩcm for the Mn-doped substrate. The experimental data are corroborated using a theoretical model for doping compensation due to deep level impurities. This level of obtained resistivity is suitable for making silicon on-chip integration of radio frequency devices.

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Published date: 2006
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 263282
URI: http://eprints.soton.ac.uk/id/eprint/263282
ISSN: 0003-6951
PURE UUID: f1e7c1fe-3bc2-4ecb-a966-0ebd81079881
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 03 Jan 2007
Last modified: 10 Jan 2022 02:45

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Contributors

Author: K. Mallik
Author: C.H. de Groot ORCID iD
Author: P. Ashburn
Author: P.R. Wilshaw

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