Ge catalysed vapour liquid solid growth of carbon nanotubes
Ge catalysed vapour liquid solid growth of carbon nanotubes
The interest in carbon nanotubes (CNTs) for electronic applications is predominantly based on the outstanding properties of single walled CNTs, which include ballistic transport and high thermal conductivity. However, there is a need to avoid the standard metal catalysts used for CNT growth, which act as “lifetime killers” for silicon devices. Here we present a Ge catalyst growth method of CNTs based on chemical vapour deposition of CNTs on SiGe and Ge dots on Si substrates. From Raman measurements, the grown CNTs are identified as single walled CNTs (SWNTs) with diameters ranging from 1.6 to 2.1 nm. We present extensive scanning electron microscopy and atomic force microscopy characterisation of the effect of each stage in the growth process. We believe that pre-growth stages lead to the formation of Ge nanoparticle seeds and we propose a vapour-liquid-solid growth mechanism.
214-217
Uchino, T.
706196b8-2f2c-403d-97aa-2995eac8572b
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Bourdakos, K.N.
6b01a41a-dfdb-45a2-bb1c-7e8052a78de0
Smith, D.C.
536ad98e-9c71-4171-a7b5-51d796090e5d
2006
Uchino, T.
706196b8-2f2c-403d-97aa-2995eac8572b
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Bourdakos, K.N.
6b01a41a-dfdb-45a2-bb1c-7e8052a78de0
Smith, D.C.
536ad98e-9c71-4171-a7b5-51d796090e5d
Uchino, T., de Groot, C.H., Ashburn, P., Bourdakos, K.N. and Smith, D.C.
(2006)
Ge catalysed vapour liquid solid growth of carbon nanotubes.
European Solid State Device Research Conference (ESSDERC), Montreux, Switzerland.
18 - 20 Sep 2006.
.
Record type:
Conference or Workshop Item
(Other)
Abstract
The interest in carbon nanotubes (CNTs) for electronic applications is predominantly based on the outstanding properties of single walled CNTs, which include ballistic transport and high thermal conductivity. However, there is a need to avoid the standard metal catalysts used for CNT growth, which act as “lifetime killers” for silicon devices. Here we present a Ge catalyst growth method of CNTs based on chemical vapour deposition of CNTs on SiGe and Ge dots on Si substrates. From Raman measurements, the grown CNTs are identified as single walled CNTs (SWNTs) with diameters ranging from 1.6 to 2.1 nm. We present extensive scanning electron microscopy and atomic force microscopy characterisation of the effect of each stage in the growth process. We believe that pre-growth stages lead to the formation of Ge nanoparticle seeds and we propose a vapour-liquid-solid growth mechanism.
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Published date: 2006
Additional Information:
Event Dates: 19 - 21 September, 2006
Venue - Dates:
European Solid State Device Research Conference (ESSDERC), Montreux, Switzerland, 2006-09-18 - 2006-09-20
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 263284
URI: http://eprints.soton.ac.uk/id/eprint/263284
PURE UUID: 5c573db5-1207-489d-a950-970a5a17a312
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Date deposited: 03 Jan 2007
Last modified: 11 Dec 2021 03:43
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Contributors
Author:
T. Uchino
Author:
K.N. Bourdakos
Author:
D.C. Smith
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