The University of Southampton
University of Southampton Institutional Repository

Ge catalysed vapour liquid solid growth of carbon nanotubes

Ge catalysed vapour liquid solid growth of carbon nanotubes
Ge catalysed vapour liquid solid growth of carbon nanotubes
The interest in carbon nanotubes (CNTs) for electronic applications is predominantly based on the outstanding properties of single walled CNTs, which include ballistic transport and high thermal conductivity. However, there is a need to avoid the standard metal catalysts used for CNT growth, which act as “lifetime killers” for silicon devices. Here we present a Ge catalyst growth method of CNTs based on chemical vapour deposition of CNTs on SiGe and Ge dots on Si substrates. From Raman measurements, the grown CNTs are identified as single walled CNTs (SWNTs) with diameters ranging from 1.6 to 2.1 nm. We present extensive scanning electron microscopy and atomic force microscopy characterisation of the effect of each stage in the growth process. We believe that pre-growth stages lead to the formation of Ge nanoparticle seeds and we propose a vapour-liquid-solid growth mechanism.
214-217
Uchino, T.
706196b8-2f2c-403d-97aa-2995eac8572b
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Bourdakos, K.N.
6b01a41a-dfdb-45a2-bb1c-7e8052a78de0
Smith, D.C.
536ad98e-9c71-4171-a7b5-51d796090e5d
Uchino, T.
706196b8-2f2c-403d-97aa-2995eac8572b
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Bourdakos, K.N.
6b01a41a-dfdb-45a2-bb1c-7e8052a78de0
Smith, D.C.
536ad98e-9c71-4171-a7b5-51d796090e5d

(2006) Ge catalysed vapour liquid solid growth of carbon nanotubes. European Solid State Device Research Conference (ESSDERC), Switzerland. 19 - 21 Sep 2006. pp. 214-217 .

Record type: Conference or Workshop Item (Other)

Abstract

The interest in carbon nanotubes (CNTs) for electronic applications is predominantly based on the outstanding properties of single walled CNTs, which include ballistic transport and high thermal conductivity. However, there is a need to avoid the standard metal catalysts used for CNT growth, which act as “lifetime killers” for silicon devices. Here we present a Ge catalyst growth method of CNTs based on chemical vapour deposition of CNTs on SiGe and Ge dots on Si substrates. From Raman measurements, the grown CNTs are identified as single walled CNTs (SWNTs) with diameters ranging from 1.6 to 2.1 nm. We present extensive scanning electron microscopy and atomic force microscopy characterisation of the effect of each stage in the growth process. We believe that pre-growth stages lead to the formation of Ge nanoparticle seeds and we propose a vapour-liquid-solid growth mechanism.

Full text not available from this repository.

More information

Published date: 2006
Additional Information: Event Dates: 19 - 21 September, 2006
Venue - Dates: European Solid State Device Research Conference (ESSDERC), Switzerland, 2006-09-19 - 2006-09-21
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 263284
URI: http://eprints.soton.ac.uk/id/eprint/263284
PURE UUID: 5c573db5-1207-489d-a950-970a5a17a312
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 03 Jan 2007
Last modified: 06 Jun 2018 12:50

Export record

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×