SiGeC HBTs: impact of C on device performance
SiGeC HBTs: impact of C on device performance
A UK consortium has recently reported an advanced RF platform technology, which includes SiGe Heterojunction Bipolar Transistors (HBT) on Silicon-On-Insulator (SOI). The study in this paper is the continuation of consortium work, focused on fabricating SiGeC HBTs and on impact of C (up to 1.6%) on device performance. The devices with low C content (0.45%) exhibit excellent performance and gain up to 500. The results indicate that C content to be used in these devices should be less than 1%.
Mitrovic, I.Z.
a1d3f694-b084-42b4-ac61-25a540be3e64
El Mubarek, H.A.W.
08195505-5e00-40a6-bc9f-ebbf2a2fbf63
Buiu, O.
a994b22e-018b-4355-abd5-0227724f2a1a
Hall, S.
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Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
2006
Mitrovic, I.Z.
a1d3f694-b084-42b4-ac61-25a540be3e64
El Mubarek, H.A.W.
08195505-5e00-40a6-bc9f-ebbf2a2fbf63
Buiu, O.
a994b22e-018b-4355-abd5-0227724f2a1a
Hall, S.
a11a8f8b-d6fb-47a7-82b1-1f76d2f170dc
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Mitrovic, I.Z., El Mubarek, H.A.W., Buiu, O., Hall, S. and Ashburn, P.
(2006)
SiGeC HBTs: impact of C on device performance.
Nato Advanced Research Workshop, Sudak, Crimea, Ukraine.
14 - 18 Oct 2006.
Record type:
Conference or Workshop Item
(Other)
Abstract
A UK consortium has recently reported an advanced RF platform technology, which includes SiGe Heterojunction Bipolar Transistors (HBT) on Silicon-On-Insulator (SOI). The study in this paper is the continuation of consortium work, focused on fabricating SiGeC HBTs and on impact of C (up to 1.6%) on device performance. The devices with low C content (0.45%) exhibit excellent performance and gain up to 500. The results indicate that C content to be used in these devices should be less than 1%.
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Published date: 2006
Additional Information:
Event Dates: October 15th - 19th
Venue - Dates:
Nato Advanced Research Workshop, Sudak, Crimea, Ukraine, 2006-10-14 - 2006-10-18
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 263287
URI: http://eprints.soton.ac.uk/id/eprint/263287
PURE UUID: 8564a5ff-de50-4853-a581-c77820c6a13e
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Date deposited: 03 Jan 2007
Last modified: 08 Jan 2022 00:00
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Contributors
Author:
I.Z. Mitrovic
Author:
H.A.W. El Mubarek
Author:
O. Buiu
Author:
S. Hall
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