Evidence for electrical spin tunnel injection into silicon
Evidence for electrical spin tunnel injection into silicon
Electrical spin injection into silicon was studied in a ferromagnet/insulator/silicon/insulator/ferromagnet structure, where the insulator is Si3N4. Si3N4 barriers conduct by hopping conduction at low voltages, but switch to Fowler-Nordheim tunneling at high voltages. In the Fowler-Nordheim tunneling regime a magnetic field dependence of the output current consistent with spin dependent transport through the silicon is observed; in the hopping conduction regime reduced magnetic field dependence of the output current is observed. This voltage dependence of the magnetic sensitivity strongly supports the existence of spin injection into silicon. After correction for Lorentz magnetoresistance, the magnitude of this signal is 4.1%+/- 0.5% (12%+/- 5%) for p-type (n-type) Si.
Spintronics, Spin transistor, tunnel injection
43717
Dennis, C L
6989eaf1-23d9-4a0e-bacc-6aa58d1b87fc
Gregg, J F
a965f013-b84d-4b2d-8916-43c73b0803cf
Ensell, G J
05e24f49-3922-4e5f-9aee-1e6078650579
Thompson, S M
ab27fce1-79a4-4b7e-b583-bb1c8b2124f0
August 2006
Dennis, C L
6989eaf1-23d9-4a0e-bacc-6aa58d1b87fc
Gregg, J F
a965f013-b84d-4b2d-8916-43c73b0803cf
Ensell, G J
05e24f49-3922-4e5f-9aee-1e6078650579
Thompson, S M
ab27fce1-79a4-4b7e-b583-bb1c8b2124f0
Dennis, C L, Gregg, J F, Ensell, G J and Thompson, S M
(2006)
Evidence for electrical spin tunnel injection into silicon.
Journal of Applied Physics, 100 (4), .
Abstract
Electrical spin injection into silicon was studied in a ferromagnet/insulator/silicon/insulator/ferromagnet structure, where the insulator is Si3N4. Si3N4 barriers conduct by hopping conduction at low voltages, but switch to Fowler-Nordheim tunneling at high voltages. In the Fowler-Nordheim tunneling regime a magnetic field dependence of the output current consistent with spin dependent transport through the silicon is observed; in the hopping conduction regime reduced magnetic field dependence of the output current is observed. This voltage dependence of the magnetic sensitivity strongly supports the existence of spin injection into silicon. After correction for Lorentz magnetoresistance, the magnitude of this signal is 4.1%+/- 0.5% (12%+/- 5%) for p-type (n-type) Si.
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Published date: August 2006
Keywords:
Spintronics, Spin transistor, tunnel injection
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 263597
URI: http://eprints.soton.ac.uk/id/eprint/263597
ISSN: 0021-8979
PURE UUID: a86e73d0-e4d9-4c25-8628-5511c2c36226
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Date deposited: 23 Feb 2007
Last modified: 14 Mar 2024 07:35
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Contributors
Author:
C L Dennis
Author:
J F Gregg
Author:
G J Ensell
Author:
S M Thompson
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